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  umts cdma Datasheet PDF File

For umts cdma Found Datasheets File :: 587    Search Time::1.547ms    
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    RFMD[RF Micro Devices]
Part No. RF3854PCBA-41X RF3854
OCR Text ... Applications cdma, GSM, and umts Basestation Architecture ISM Transceivers Broadband Fixed Wireless Access and Wireless Local Loop GMSK, QPSK, DQPSK, QAM Modulation Functional Block Diagram Product Description The RF3854 is a low...
Description LOW NOISE, MULTI-MODE, QUAD-BAND, QUADRATURE MODULATOR AND PA DRIVER

File Size 522.68K  /  26 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MRFG35010N
OCR Text ...r Designed for WLL/MMDS/BWA or umts driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for ...cdma Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH...
Description RF Power Field Effect Transistor

File Size 181.50K  /  12 Page

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    MOTOROLA[Motorola, Inc]
Part No. MRFG35003MT1
OCR Text ...r Designed for WLL/MMDS/BWA or umts driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. * Typical W-cdma Performance: -42 dBc ACPR, 3.55 GHz, 1...
Description MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR

File Size 331.39K  /  8 Page

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    MOTOROLA[Motorola, Inc]
Part No. MRFG35003M6T1
OCR Text ...ned for 3.5 GHz WLL/MMDS/BWA or umts applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in Cl...cdma Performance: -42 dBc ACPR, 3.55 GHz, 6 Volts, IDQ = 180 mA Output Power -- 450 mWatts Power Gai...
Description MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT
GALLIUM ARSENIDE PHEMT

File Size 325.84K  /  8 Page

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    MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Part No. MAX2291WcdmaEVKIT MAX2291 MAX2291NcdmaEVKIT MAX2291TDMAEVKIT
OCR Text ...overing N-cdma, TDMA, and Wcdma/umts. Easy Evaluation of the MAX2291 +2.7V to +4.2V Single-Supply Operation Jumpers for Digital Power Control and Shutdown All Critical Peripheral Components Included Features Evaluates: MAX2291 ...
Description Evaluation Kit

File Size 177.49K  /  10 Page

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    AH215-S8 AH215 AH215-S8PCB900 AH215-S8PCB1960 AH215-S8PCB2140

List of Unclassifed Manufacturers
WJ Communications
ETC[ETC]
Electronic Theatre Controls, Inc.
List of Unclassifed Manufac...
Part No. AH215-S8 AH215 AH215-S8PCB900 AH215-S8PCB1960 AH215-S8PCB2140
OCR Text ...as GPRS, GSM, cdma, W-cdma, and umts, where high linearity and high power is required. The internal active bias allows the AH215 to maintain high linearity over temperature and operate directly off a +5 V supply. Functional Diagram 1 8 ...
Description 1 Watt, High Linearity HBT Amplifier

File Size 251.04K  /  6 Page

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    HMC497LP4E HMC497LP409

Hittite Microwave Corporation
Part No. HMC497LP4E HMC497LP409
OCR Text ...he hmc497lp4(e) is ideal for: ? umts, gsm or cdma basestations ? fixed wireless or wll ? ism transceivers, 900 & 2400 mhz ? gmsk, qpsk, qam, ssb modulators electrical speci cations, see test conditions on following page herein. parameter ...
Description SiGe WIDEBAND DIRECT MODULATOR RFIC, 100 - 4000 MHz

File Size 363.14K  /  10 Page

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    ECP100G AH215-S8 AH215-S8PCB900 AH215-RFID AH215-S8G AH215-S8PCB1960 AH215-S8PCB2140

WJCI[WJ Communication. Inc.]
Part No. ECP100G AH215-S8 AH215-S8PCB900 AH215-RFID AH215-S8G AH215-S8PCB1960 AH215-S8PCB2140
OCR Text ...as GPRS, GSM, cdma, W-cdma, and umts, where high linearity and high power is required. The internal active bias allows the AH215 / ECP100 to maintain high linearity over temperature and operate directly off a +5 V supply. Functional Diag...
Description 1 Watt, High Gain HBT Amplifier

File Size 795.52K  /  9 Page

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    MRFG35005NT1 MRFG35005MT1

Freescale (Motorola)
Freescale Semiconductor, Inc
飞思卡尔半导体(中国)有限公司
Part No. MRFG35005NT1 MRFG35005MT1
OCR Text ...r Designed for WLL/MMDS/BWA or umts driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. * Typical W - cdma Performance: - 42 dBc ACPR, 3.55 GHz...
Description Gallium Arsenide PHEMT RF Power Field Effect Transistor

File Size 119.77K  /  12 Page

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    Motorola, Inc.
Part No. MRFG35003MT1
OCR Text ...r designed fo r wll/mmds/bwa or umts driver applications with frequencies from 1.8 to 3.6 ghz. device is unmatched and is suitable for use in class ab linear base station applications. ? typical w?cdma performance: ?42 dbc acpr, 3.55 ghz, 1...
Description The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR

File Size 332.98K  /  8 Page

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For umts cdma Found Datasheets File :: 587    Search Time::1.547ms    
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