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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
K7J323682M K7J321882M
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OCR Text |
...nt. 1. Pin name change from DLL to Doff 2. Update JTAG test conditions. 3. Reserved pin for high density name change from NC to Vss/SA 4. De...220 Draft Date July, 15 2001 Dec, 14 2001 Remark Advance Preliminary
0.2
July, 29. 2002
Pre... |
Description |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
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File Size |
304.26K /
17 Page |
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it Online |
Download Datasheet |
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STANSON[Stanson Technology]
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Part No. |
M02N60B
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OCR Text |
...alanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in ...220 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Tj = 25J... |
Description |
N Channel MOSFET
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File Size |
81.03K /
5 Page |
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it Online |
Download Datasheet |
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STANSON[Stanson Technology]
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Part No. |
ST1638-XXS89 ST1638 ST1638-XXS23
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OCR Text |
...xternal components are required to construct a low ripple, high efficiency converter. ST1638 can start up from 0.9V input voltage with 1mA l...220 Thermal Resistance Junction-Case(*) SOT-89 100 Rc jc J /W SOT-23 95 (*)The power dissipation and... |
Description |
Step-Up DC/DC Converter High Efficiency PFM
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File Size |
95.13K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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