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For ruggedized Found Datasheets File :: 3510 Search Time::1.344ms
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				IRF[International Rectifier]
Part No.	IRF5806
OCR Text	...This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications. D 1 6 A D...
Description	Power MOSFET(Vdss=-20V)
File Size	154.77K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFL4310 IRFL4310TR
OCR Text	...th the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is d...
Description	HEXFET? Power MOSFET 1.6 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A) 100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
File Size	310.61K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFR1205 IRFU1205 IRFRU1205
OCR Text	...th the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mou...
Description	Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A? Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A) Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A?)
File Size	140.62K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFR120N IRFU120N IRFR IRFR120NTR IRFR120NTRL IRFR120NTRR IRFU120NPBF
OCR Text	...th the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mou...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A) (IRFR120N / IRFU120N) HEXFET Power MOSFET HEXFET® Power MOSFET 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package 9.1 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
File Size	145.98K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFZ34E
OCR Text	...th the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally pre...
Description	N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管)
File Size	116.70K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFZ34 IRFZ34N
OCR Text	...th the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally pre...
Description	Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
File Size	195.05K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLML5103 IRLML5103PBF IRLML5103TR
OCR Text	...th the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe h...
Description	-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package Power MOSFET(Vdss=-30V, Rds(on)=0.60ohm)
File Size	190.06K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRLMS1503
OCR Text	...th the fast switching speed and ruggedized device design that HEXFET(R) power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package wi...
Description	30V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
File Size	175.92K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRLMS1902 IRLMS1902TR
OCR Text	...th the fast switching speed and ruggedized device design that HEXFET(R) power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package wi...
Description	20V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
File Size	183.10K / 8 Page	View it Online	Download Datasheet

				HI-SINCERITY MICROELECTRONICS, CORP. Hi-Sincerity Mocroelectronics
Part No.	HIRF630
OCR Text	... combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Absolute Maximum Ratings (Ta=25C) * Maximum Temperatures Storage Temperature ..............................................................
Description	N-Channel MOSFETs N沟道MOSFET
File Size	51.97K / 5 Page	View it Online	Download Datasheet

For ruggedized Found Datasheets File :: 3510 Search Time::1.344ms
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