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				YAGEO CORP
Part No.	SDT0804T-102M-S
OCR Text	...ng circuits. sdt - - p r od uct i d e n ti f icati on international no. tolerance inductance packaging style dimensions product sym...s) frequency sdt0804t-1r0 -s 1.0 0.025 60 5.0 0.5 9 1 mhz sdt0804t-1r5 -s 1.5 0.0...
Description	1 ELEMENT, 1000 uH, GENERAL PURPOSE INDUCTOR, SMD
File Size	216.80K / 6 Page	View it Online	Download Datasheet

				YAGEO CORP
Part No.	BAQ321609T-221Y-S BAY321609T-121Y-S BAY321609T-221Y-N BAY321609T-300Y-S BAY321609T-241Y-S BAY321609T-471Y-N BAY321609T-601Y-N BAY321609T-601Y-S BAY321609T-102Y-N BAY321609T-151Y-N BAY321609T-181Y-N BAY321609T-600Y-S
OCR Text	...d-roms ? motherboard f ea t u r es these multi-layered chip bead arrays are surface mounting emi components. four lines in one chip for su...s tic s pa rt n o. i m pedan c e d c res i s t an c e ra t ed cu rr en t at 100m h z ( ? ...
Description	4 FUNCTIONS, 0.15 A, FERRITE CHIP 4 FUNCTIONS, 0.35 A, FERRITE CHIP 4 FUNCTIONS, 0.1 A, FERRITE CHIP 4 FUNCTIONS, 0.05 A, FERRITE CHIP 4 FUNCTIONS, 0.25 A, FERRITE CHIP
File Size	399.08K / 5 Page	View it Online	Download Datasheet

				ELM Technology Corporation
Part No.	ELM36802EA-S
OCR Text	...C 3 VGS= 10V SINGLE PULSE R JA=150 C/W TA=25C 0.1 0.3 1 3 2 1 VGS= 10V SINGLE PULSE R JA=150 C/W TA=25C 0.1 1 10 100 300 0.01 10 VDS, Drain-Source Voltage(V) 0 0.01 Single pulse time(SEC) Transient Thermal...
Description	Dual N-channel MOSFET
File Size	97.35K / 4 Page	View it Online	Download Datasheet

				ELM Technology Corporation
Part No.	ELM34802AA-S
OCR Text	...) 3 VGS= 10V SINGLE PULSE R JA=125 C/W TA=25C 0.1 0.3 1 3 1s DC 2 1 VGS= 10V SINGLE PULSE R JA=125 C/W TA=25C 0.1 1 10 100 300 0.01 10 30 50 0 0.01 VDS, Drain-Source Voltage(V) Single pulse time(SEC)...
Description	Dual N-channel MOSFET
File Size	101.30K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGBC40K-S
OCR Text	... parameter min. typ. max. units r q jc junction-to-case ------ ------ 0.77 r q ja junction-to-ambient, (pcb mount)** ------ ------ 40 c/w r ...s v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy ? 15 mj p d @ t c = 25...
Description	Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体
File Size	112.52K / 7 Page	View it Online	Download Datasheet

				ELM Technology Corporation
Part No.	ELM36600EA-S
OCR Text	...0 3 VGS= 10V SINGLE PULSE R JA=150 C/W TA=25C 0.1 0.3 1 3 1s DC 2 1 VGS= 10V SINGLE PULSE R JA=150 C/W TA=25C 0.1 1 10 1...S (O RD T IMI N)L 4 ID, Drain Current(A) 3 1 0.3 0.1 0.03 1m s 10m s 100 ms Power(W) 3...
Description	Complementary MOSFET
File Size	165.44K / 7 Page	View it Online	Download Datasheet

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