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For pseudomorphic Found Datasheets File :: 271 Search Time::1.453ms
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				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	FP750SOT343
OCR Text	...a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring low noise figure, medium output power and/or high dynamic range. It utilizes a 0.25 m x 750 m Schottky barrier gate,...
Description	PACKAGED LOW NOISE, MEDIUM POWER PHEMT
File Size	54.79K / 3 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC Electronic Theatre Controls, Inc.
Part No.	RMPA0913C-58
OCR Text	...rity.The device uses Raytheon's pseudomorphic High Electron Mobility Transistor (pHEMT) process. Positive supply voltage of 3.5V, nominal Power Added Efficiency of 56%, typical, at power out of 31.5 dBm Power Added Efficiency of 40%, typica...
Description	3.5V AMPS/CDMA Power Amplifier
File Size	254.72K / 6 Page	View it Online	Download Datasheet

				http:// Mimix Broadband, Inc.
Part No.	CDQ0303-QS07 PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0 CDQ0303-QS-0G00
OCR Text	...ier Design AlGaAs/InGaAs/AlGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) High Gain: 25 dB @ 900 MHz 21 dB @ 1900 MHz Low Noise Figure: 0.6 dB @ 900 MHz 0.7 dB @ 1900 MHz 17 dBm P1dB at 2 GHz 33 dBm OIP3 at 2 GHz 600m Gate Wid...
Description	500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier 500 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
File Size	528.65K / 14 Page	View it Online	Download Datasheet

				Mimix Broadband
Part No.	CFS0303-SB07 CFS0303-SB PB-CFS0303-SB-00A0 PB-CFS0303-SB-00B0 PB-CFS0303-SB-00C0 PB-CFS0303-SB-00D0
OCR Text	... Features AIGaAs/InGaAs/AIGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) High Dynamic Range Low Current and Voltage Bias Point 3V and 60 mA 0.3 dB Noise Figure at 2 GHz 17 dBm P1dB at 2 GHz 33 dBm OIP3 at 2 GHz 600 m Gate Wid...
Description	0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package
File Size	415.40K / 17 Page	View it Online	Download Datasheet

				Filtronic Compound Semiconductors
Part No.	EB200P70-AJ FPD200P70 FPD200P701
OCR Text	...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 200 mm Schottky barrier Gate, defined by high-resolution stepperbased photolithography. TYPICAL APPLICATIONS: * * LNAs and ...
Description	HIGH FREQUENCY PACKAGED PHEMT
File Size	355.87K / 9 Page	View it Online	Download Datasheet

				Filtronic Compound Semiconductors
Part No.	EB750DFN-BA EB750DFN-BB EB750DFN-BC EB750DFN-BE FPD750DFN1 EB750DFN-AJ FPD750DFN
OCR Text	...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 750 m Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure mi...
Description	LOW NOISE HIGH LINEARITY PACKAGED PHEMT
File Size	322.37K / 9 Page	View it Online	Download Datasheet

				Filtronic Compound Semicond... Filtronic Compound Semiconductors
Part No.	FPD1000AS-EB FPD1000AS FPD1000AS1
OCR Text	...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. * * Drivers or output stages in PCS/Cellul...
Description	1W PACKAGED POWER PHEMT
File Size	456.99K / 11 Page	View it Online	Download Datasheet

				RF MICRO DEVICES INC Filtronic Compound Semiconductors
Part No.	FPD1500SOT89CE FPD1500SOT89 EB1500SOT89E-BG EB1500SOT89E-BB EB1500SOT89E-BA EB1500SOT89E-BC EB1500SOT89E-BD EB1500SOT89E-BE FPD1500SOT89E FPD1500SOT891
OCR Text	...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 1500 m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The double recessed gate structure mini...
Description	Si, N-CHANNEL, RF POWER, HEMFET LOW NOISE HIGH LINEARITY PACKAGED PHEMT
File Size	606.77K / 12 Page	View it Online	Download Datasheet

				Filtronic Compound Semiconductors
Part No.	FPD2000AS-EB FPD2000AS FPD2000AS1
OCR Text	...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. TYPICAL APPLICATIONS: * * Drivers or o...
Description	2W PACKAGED POWER PHEMT
File Size	320.19K / 10 Page	View it Online	Download Datasheet

				Filtronic Compound Semiconductors
Part No.	FPD2250SOT89CE FPD2250SOT89 FPD2250SOT89E FPD2250SOT891
OCR Text	...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 2250 m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The double recessed gate structure mini...
Description	LOW NOISE HIGH LINEARITY PACKAGED PHEMT
File Size	323.27K / 6 Page	View it Online	Download Datasheet

For pseudomorphic Found Datasheets File :: 271 Search Time::1.453ms
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