Part Number Hot Search : 
MTZJ1 PS20060 CS843 OPR2800V 1SS19307 LCX16 04504 002228
Product Description
Full Text Search
  dv dt Datasheet PDF File

For dv dt Found Datasheets File :: 28218    Search Time::1.547ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

    CD471290 CD420890 CD421690 CD471690 CD4290 CD421290 CD470890

Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
http://
Powerex Power Semicondu...
Part No. CD471290 CD420890 CD421690 CD471690 CD4290 CD421290 CD470890
OCR Text ... B Ln I +C I + D Sqrt I Minimum dv/dt Turn-Off Time (Typical) dv/dt t off Linear to 2/3 VDRM Tj=125C, Gate Open Circuit TJ = 25C, IT = 2A Vr = 50V, -dI/dt=10 A/s Re-Applied dv/dt = 200 V/s, Linear to 900 V Tj= -40C, VD=6V, Resistive Load Tj...
Description    POW-R-BLOK Dual SCR/Diode Isolated Module 90 Amperes / Up to 1600 Volts
R8C Series, R8C/33A Group, WdtO 32P6U-A; Vcc= 1.8 to 5.5 volts, Temp= -20 to 85 C, dataflash; Package: PLQP0052JA-A 140 A, 1600 V, SCR

File Size 101.94K  /  4 Page

View it Online

Download Datasheet





    TK12V60W

Toshiba Semiconductor
Part No. TK12V60W
OCR Text ...ing time (turn-off time) mosfet dv/dt ruggedness symbol c iss c rss c oss c o(er) r g t r t on t f t off dv/dt test condition v ds = 300 v, v gs = 0 v, f = 1 mhz v ds = 0 to 400 v, v gs = 0 v v ds = open, f = 1 mhz see figure 6.2.1 v d...
Description MOSFETs
Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 245.97K  /  10 Page

View it Online

Download Datasheet

    TK10E60W

Toshiba Semiconductor
Part No. TK10E60W
OCR Text ...ing time (turn-off time) mosfet dv/dt ruggedness symbol c iss c rss c oss c o(er) r g t r t on t f t off dv/dt test condition v ds = 300 v, v gs = 0 v, f = 1 mhz v ds = 0 to 400 v, v gs = 0 v v ds = open, f = 1 mhz see figure 6.2.1 v d...
Description Switching Voltage Regulators

File Size 252.53K  /  10 Page

View it Online

Download Datasheet

    TK10E60W

Toshiba Semiconductor
Part No. TK10E60W
OCR Text ...ing time (turn-off time) mosfet dv/dt ruggedness symbol c iss c rss c oss c o(er) r g t r t on t f t off dv/dt test condition v ds = 300 v, v gs = 0 v, f = 1 mhz v ds = 0 to 400 v, v gs = 0 v v ds = open, f = 1 mhz see figure 6.2.1 v d...
Description MOSFETs
Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 252.81K  /  10 Page

View it Online

Download Datasheet

    Xian Semipower Electronic Technology Co., Ltd.
Part No. SWF7N65
OCR Text ...e charge ( typ 35 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin . this technology enable power mosfet to have better characteristics, such a...
Description N-channel MOSFET

File Size 771.85K  /  7 Page

View it Online

Download Datasheet

    Xian Semipower Electronic Technology Co., Ltd.
Part No. SWF7N60A
OCR Text ...e charge ( typ 38 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin . this technology enable power mosfet to have better characteristics, such a...
Description N-channel MOSFET

File Size 718.37K  /  7 Page

View it Online

Download Datasheet

    FAIRCHILD SEMICONDUCTOR CORP
Part No. SFU2955TU
OCR Text ... peak diode recovery dv/dt total power dissipation (t a =25 o c) total power dissipation (t c =25 o c) linear derating factor operating junction and storage temperature range maximum lead temp. for ...
Description 7.6 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251

File Size 306.39K  /  9 Page

View it Online

Download Datasheet

    IPA65R225C7

Infineon Technologies AG
Part No. IPA65R225C7
OCR Text ...ty. features ?increasedmosfetdv/dtruggedness ?betterefficiencyduetobestinclassfomr ds(on) *e oss andr ds(on) *q g ?bestinclassr ds(on) /package ?easytouse/drive ?pb-freeplating,halogenfreemoldcompound ?qualifie...
Description high power thyristor diode

File Size 1,730.63K  /  15 Page

View it Online

Download Datasheet

    FCB20N60 FCB20N60TM

FAIRCHILD[Fairchild Semiconductor]
Part No. FCB20N60 FCB20N60TM
OCR Text ...formance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D D ! " ...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 611.95K  /  8 Page

View it Online

Download Datasheet

    FCP20N60 FCPF20N60

Fairchild Semiconductor
Part No. FCP20N60 FCPF20N60
OCR Text ...formance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D ! " G...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 855.17K  /  10 Page

View it Online

Download Datasheet

For dv dt Found Datasheets File :: 28218    Search Time::1.547ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of dv dt