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IRF[International Rectifier]
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Part No. |
IRF7904PBF
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OCR Text |
...0000 VGS = 0V, f = 1 MHZ Ciss = cgs + Cgd, Cds SHORTED Crss = Cgd
Typical Characteristics Q2 - Synchronous FET
10000 VGS = 0V, f = 1 MHZ Ciss = cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
C, Capacitance (pF)
1000
Ciss
... |
Description |
Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box
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File Size |
254.03K /
10 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FQS4900 FQS4900TF
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OCR Text |
...d Temperature
12 160
Ciss = cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
10
120
Capacitance [pF]
Ciss Coss
80
Notes : 1. VGS = 0 V 2. f = 1 MHz
VGS, Gate-Source Voltage [V]
8
VDS = 30V VDS = 48V
6
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Description |
Dual N & P-Channel/ Logic Level MOSFET Dual N & P-Channel, Logic Level MOSFET Dual N-Channel 60V & P-Channel 300V QFET
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File Size |
1,051.55K /
9 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
cgs3322M cgs3321 cgs3321M cgs3322 cgs3322MX
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OCR Text |
cgs3321 * cgs3322 CMOS Crystal Clock Generators
September 1195 Revised January 2001
cgs3321 * cgs3322 CMOS Crystal Clock Generators
General Description
The cgs3321 and cgs3322 devices are designed for Clock Generation and Support (C... |
Description |
CMOS Crystal Clock Generators From old datasheet system
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File Size |
150.66K /
6 Page |
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INTERSIL[Intersil Corporation]
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Part No. |
BUZ76
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OCR Text |
...CE (S) VGS = 0, f = 1MHz CISS = cgs + CGD CRSS = CGD COSS = CDS + cgs
4
PULSE DURATION = 80s VDS = 25V TJ = 25oC
C, CAPACITANCE (nF)
100 CISS 10-1 COSS CRSS 10-2
3
2
1
0
10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V)
... |
Description |
3A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET 3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
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File Size |
42.07K /
5 Page |
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INTERSIL[Intersil Corporation]
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Part No. |
BUZ76A
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OCR Text |
...CE (S) VGS = 0, f = 1MHz CISS = cgs + CGD CRSS = CGD COSS CDS + cgs
4
PULSE DURATION = 80s VDS = 25V TJ = 25oC
C, CAPACITANCE (nF)
100
3
CISS 10-1 COSS CRSS 10-2 0 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 40
2
1
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Description |
2.6A/ 400V/ 2.500 Ohm/ N-Channel Power MOSFET 2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET
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File Size |
42.46K /
5 Page |
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INTERSIL[Intersil Corporation]
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Part No. |
BUZ73A
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OCR Text |
...(S) 40 VGS = 0, f = 1MHz CISS = cgs + CGD CRSS = CGD COSS = CDS + cgs
4
PULSE DURATION = 80s VDS = 25V TJ = 25oC
C, CAPACITANCE (nF)
100 CISS
3
10-1
2
COSS CRSS
1
10-2
0
10 20 30 VDS, DRAIN TO SOURCE VOLT... |
Description |
5.8A/ 200V/ 0.600 Ohm/ N-Channel Power MOSFET 5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET
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File Size |
42.24K /
5 Page |
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MOTOROLA[Motorola, Inc]
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Part No. |
AN211A
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OCR Text |
... the nitride-oxide capacitance. cgs is the gate-source capacitance of the metal gate area overlapping the source, while Cgd is the gate-drain capacitance of the metal gate area overlapping the drain. Cd(sub) and Cs(sub) are junction capacit... |
Description |
FIFELD EFFECT TRANSISTORS IN THEORY AND PRACTICE
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File Size |
327.70K /
12 Page |
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