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  cgs Datasheet PDF File

For cgs Found Datasheets File :: 3307    Search Time::1.343ms    
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    STP40N03L-20 4886

ST Microelectronics
STMicroelectronics
Part No. STP40N03L-20 4886
OCR Text ... S2 LD LG LS RDRAIN RG ATE CG D cgs ALFA RG N Parameter (V14_16<0) (See Power Mosfet Model Subcircuit) (V16_11<0) (See Power Mosfet Model Subcircuit) Drain Inductance Gate Inductance Source Inductance Drain Resistance Gate Resistance Gate D...
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR

File Size 64.40K  /  7 Page

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    IRF[International Rectifier]
Part No. IRF7904PBF
OCR Text ...0000 VGS = 0V, f = 1 MHZ Ciss = cgs + Cgd, Cds SHORTED Crss = Cgd Typical Characteristics Q2 - Synchronous FET 10000 VGS = 0V, f = 1 MHZ Ciss = cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 1000 Ciss ...
Description    Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box

File Size 254.03K  /  10 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQS4900 FQS4900TF
OCR Text ...d Temperature 12 160 Ciss = cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 120 Capacitance [pF] Ciss Coss 80 Notes : 1. VGS = 0 V 2. f = 1 MHz VGS, Gate-Source Voltage [V] 8 VDS = 30V VDS = 48V 6 ...
Description Dual N & P-Channel/ Logic Level MOSFET
Dual N & P-Channel, Logic Level MOSFET
Dual N-Channel 60V & P-Channel 300V QFET

File Size 1,051.55K  /  9 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. cgs3322M cgs3321 cgs3321M cgs3322 cgs3322MX
OCR Text cgs3321 * cgs3322 CMOS Crystal Clock Generators September 1195 Revised January 2001 cgs3321 * cgs3322 CMOS Crystal Clock Generators General Description The cgs3321 and cgs3322 devices are designed for Clock Generation and Support (C...
Description CMOS Crystal Clock Generators
From old datasheet system

File Size 150.66K  /  6 Page

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    INTERSIL[Intersil Corporation]
Part No. BUZ76
OCR Text ...CE (S) VGS = 0, f = 1MHz CISS = cgs + CGD CRSS = CGD COSS = CDS + cgs 4 PULSE DURATION = 80s VDS = 25V TJ = 25oC C, CAPACITANCE (nF) 100 CISS 10-1 COSS CRSS 10-2 3 2 1 0 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) ...
Description 3A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET
3A, 400V, 1.800 Ohm, N-Channel Power MOSFET

File Size 42.07K  /  5 Page

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    INTERSIL[Intersil Corporation]
Part No. BUZ76A
OCR Text ...CE (S) VGS = 0, f = 1MHz CISS = cgs + CGD CRSS = CGD COSS CDS + cgs 4 PULSE DURATION = 80s VDS = 25V TJ = 25oC C, CAPACITANCE (nF) 100 3 CISS 10-1 COSS CRSS 10-2 0 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 2 1 ...
Description 2.6A/ 400V/ 2.500 Ohm/ N-Channel Power MOSFET
2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET

File Size 42.46K  /  5 Page

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    INTERSIL[Intersil Corporation]
Part No. BUZ73A
OCR Text ...(S) 40 VGS = 0, f = 1MHz CISS = cgs + CGD CRSS = CGD COSS = CDS + cgs 4 PULSE DURATION = 80s VDS = 25V TJ = 25oC C, CAPACITANCE (nF) 100 CISS 3 10-1 2 COSS CRSS 1 10-2 0 10 20 30 VDS, DRAIN TO SOURCE VOLT...
Description 5.8A/ 200V/ 0.600 Ohm/ N-Channel Power MOSFET
5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET

File Size 42.24K  /  5 Page

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    MOTOROLA[Motorola, Inc]
Part No. AN211A
OCR Text ... the nitride-oxide capacitance. cgs is the gate-source capacitance of the metal gate area overlapping the source, while Cgd is the gate-drain capacitance of the metal gate area overlapping the drain. Cd(sub) and Cs(sub) are junction capacit...
Description FIFELD EFFECT TRANSISTORS IN THEORY AND PRACTICE

File Size 327.70K  /  12 Page

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    BUZ71A

Intersil Corporation
Part No. BUZ71A
OCR Text ...(S) 40 VGS = 0, f = 1MHz CISS = cgs +CGD CRSS = CGD COSS CDS + cgs PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX o 5 VDS = 25V, TJ = 25 C 4 3 2 1 0 C, CAPACITANCE (nF) 100 CISS COSS 10-1 CRSS 10-2 0 10 20 30 VDS, DRAIN TO SO...
Description 13A/ 50V/ 0.120 Ohm/ N-Channel Power MOSFET
13A, 50V, 0.120 Ohm, N-Channel Power MOSFET

File Size 48.94K  /  6 Page

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    TC1301

List of Unclassifed Manufacturers
ETC
TRANSCOM
Part No. TC1301
OCR Text ... Gm Cds T Rds Rd Ld Lg Rg cgs Ri Lg Rg cgs Ri Cgd Rs Ls Gm T SMALL SIGNAL MODEL, VDS = 6 V, IDS = 80 mA SCHEMATIC PARAMETERS Parameters Parameters 0.056 nH 1.33 pF 0.052 pF 315 mS 5.63 psec Rs 1.808 Ohm 0.016 nH 0....
Description Low Noise and Medium Power GaAs FETs

File Size 204.99K  /  6 Page

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For cgs Found Datasheets File :: 3307    Search Time::1.343ms    
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