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  avalanche-energy-rated Datasheet PDF File

For avalanche-energy-rated Found Datasheets File :: 12832    Search Time::1.562ms    
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    IRL5602S IRF530S IRL5602STRR IRL5602STRL

IRF[International Rectifier]
Part No. IRL5602S IRF530S IRL5602STRR IRL5602STRL
OCR Text ... P-Channel Fast Switching Fully Avalanche Rated D VDSS = -20V G S RDS(on) = 0.042W ID = -24A Description Fifth Generation HEXF...Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction a...
Description -20V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 169.26K  /  8 Page

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    IRLBA1304 IRLBA1304P

IRF[International Rectifier]
Part No. IRLBA1304 IRLBA1304P
OCR Text ...ion conditions vs. TO-220 Fully Avalanche Rated Purchase IRLBA1304/P for solder plated option. D VDSS = 40V RDS(on) = 0.004 G I...Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction a...
Description HEXFET? Power MOSFET

File Size 103.65K  /  8 Page

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    IRLI2910

IRF[International Rectifier]
Part No. IRLI2910
OCR Text ... Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l IRLI2910 HEXFET(R) Power MOSFET D VDSS = 100V RDS(on) = 0.026 G ...Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction a...
Description HEXFET Power MOSFET

File Size 140.03K  /  8 Page

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    IRLU9343-701 IRLR9343 IRLU9343

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRLU9343-701 IRLR9343 IRLU9343
OCR Text ...ure for Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability l Multiple Package Options l IRLR9343 IRLU9343 IRLU9...Energy i --- 120 See Fig. 14, 15, 17a, 17b Diode Characteristics Parameter IS @ TC = 2...
Description -55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a I-Pak package
DIGITAL AUDIO MOSFET
DIODE MED-FAST BAS116 80VR 250MA 1.25VF@150MA 1.5US TO-236AB -55 150C 数字音频MOSFET

File Size 242.32K  /  10 Page

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    MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D
OCR Text ...to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, c...
Description TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM
From old datasheet system

File Size 252.63K  /  10 Page

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    MTD5P06E

MOTOROLA INC
Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTD5P06E
OCR Text ...to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, c...
Description TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM

File Size 207.75K  /  10 Page

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    MTD5P06V ON2511 MTD5P06V-T4

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTD5P06V ON2511 MTD5P06V-T4
OCR Text ...to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circu...
Description 5 A, 60 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET
TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM
From old datasheet system

File Size 244.68K  /  10 Page

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    MTE125N20E MTE125N20E_D ON2529

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTE125N20E MTE125N20E_D ON2529
OCR Text ...to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suppl...
Description From old datasheet system
TMOS POWER FET 125 AMPERES 200 VOLTS RDS(on) = 0.015 OHM

File Size 227.99K  /  8 Page

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    MTY55N20E MTY55N20E_D ON2720

Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semi
Part No. MTY55N20E MTY55N20E_D ON2720
OCR Text ...to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, c...
Description TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM 55 A, 200 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system

File Size 231.14K  /  8 Page

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    BSP170P Q67041-S4018

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BSP170P Q67041-S4018
OCR Text Avalanche rated * dv/dt rated Pin 1 G Type BSP 170 P VDS 60 V ID RDS(on) Package @ VGS VGS = -10 V SOT-223 Maximum Ratings , at Tj = 25C, un...energy, single pulse ID = -1.9 A, VDD = -25 V, RGS = 25 Avalanche current,periodic limited by Tjmax...
Description SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated) 1.9 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
High Speed CMOS 8-Channel Analog Multiplexer/Demultiplexer 16-SOIC -55 to 125
SIPMOS ? Power Transistor
From old datasheet system

File Size 151.13K  /  9 Page

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