935-960 pdf Datasheet P15 Full Text Search --- IC-ON-LINE


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935-960 Datasheet PDF File

For 935-960 Found Datasheets File :: 593 Search Time::1.157ms
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				Motorola, Inc
Part No.	MRF9002R2
OCR Text	... 25 mA Single-Tone 10 dBm 935 945 955 965 975 985 f, FREQUENCY (MHz) Figure 7. Intermodulation Distortion Product...960 985 Zsource 4.5 + j13.3 4.3 + j15.3 4.1 + j15.8 Transistor 1 VDD = 26 V, IDQ = 25 mA, Pout = 2 ...
Description	MRF9002R2 1.0 GHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET RF Power Field Effect Transistor Array
File Size	576.52K / 12 Page	View it Online	Download Datasheet

				Ericsson Microelectronics
Part No.	PTF10036
OCR Text	...` POUT = 85 W Return Loss (dB) 935 945 955 40 -30 5 -15 20 10 -25 0 -35 20 -10 10 -15 0 0 -20 860 865 870 875 880 885 890 895 900 ...960 20 30 40 50 60 70 80 90 100 Frequency (MHz) Output Power (Watts...
Description	85 Watts, 86060 MHz GOLDMOS Field Effect Transistor 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
File Size	220.13K / 6 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20105
OCR Text	... ICQ = 0.100 A Pout = 20 W 930 935 940 945 950 955 960 10 17 19 21 23 25 27 7 925 Vcc, Supply Voltage Frequency (MHz) Efficiency vs. Output Power 60 50 Efficiency (%) 40 30 20 10 0 4 8 12 16 20 24 VCC = 25 V ICQ = ...
Description	20 Watts, 92560 MHz Cellular Radio RF Power Transistor 20 Watts, 925-960 MHz Cellular Radio RF Power Transistor
File Size	45.36K / 3 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10015
OCR Text	... IDQ = 380 mA POUT = 50 W 930 935 940 945 950 955 960 40 22 24 26 28 30 32 34 11 925 Drain-Source Voltage (Volts) Frequency (MHz) Capacitance vs. Supply Voltage 160 140 18 Bias Voltage vs. Temperature 1.03 1.02 Bias Vo...
Description	50 Watts/ 300-960 MHz GOLDMOS Field Effect Transistor 50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor 50 Watts, 30060 MHz GOLDMOS Field Effect Transistor
File Size	220.13K / 6 Page	View it Online	Download Datasheet

				Freescale (Motorola) FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF9045LR1 MRF9045LSR1
OCR Text	...NCY (MHz) 955 -38 960 -14 935 -16 Figure 3. Class AB Broadband Circuit Performance IMD, INTERMODULATION DISTORTION (dBc) 20.0 19.5 G ps , POWER GAIN (dB) 19.0 18.5 18.0 17.5 17.0 16.5 0.5 1 VDD = 28 Vdc f1 = 945 MHz 10 Pou...
Description	945 MHz, 45 W, 28 V Lateral N–Channel Broadband RF Power MOSFET RF POWER FIELD EFFECT TRANSISTORS
File Size	218.79K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	MRF9002RS
OCR Text	... 25 mA Single-Tone 10 dBm 935 945 955 965 975 985 Pout, OUTPUT POWER (dBm) f, FREQUENCY (MHz) Figure 7. Interm...960 985 Zin 4.5 - j13.3 4.3 - j15.3 4.1 - j15.8 Transistor 1 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PE...
Description	RF POWER FIELD EFFECT TRANSISTOR ARRAY From old datasheet system
File Size	288.60K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BLM6G10-30 BLM6G10-30G
OCR Text	...c) (dbc) 2-carrier w-cdma f 1 = 935; f 2 = 945 28 2 29 11.5 ? 48.5 [1] ? 52 [1] caution this device is sensitive to electrostatic di scharge...960 mhz power mmic 2. pinning information 2.1 pinning 2.2 pin description transparent top view f...
Description	W-CDMA 860 MHz to 960 MHz power MMIC BLM6G10-30G<SOT822-1 (HSOP16)\|<<http://www.nxp.com/packages/SOT822-1.html<1<,;BLM6G10-30G<SOT822-1 (HSOP16)\|<<http://www.nxp.com/packages/SOT822-1.html<1<,;
File Size	495.85K / 15 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF9060 MRF9060LR1 MRF9060LSR1
OCR Text	...ing 50 45 40 35 -30 -32 -34 -36 935 940 945 950 f, FREQUENCY (MHz) 955 -38 960 Figure 3. Class AB Broadband Circuit Performance IDQ = 650 mA 500 mA IMD, INTERMODULATION DISTORTION (dBc) 18 17.5 G ps , POWER GAIN (dB) 17 16.5 16 ...
Description	RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs
File Size	224.86K / 12 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF9045MR1 MRF9045MBR1 MRF9045
OCR Text	...N (dB) 18 17 16 15 14 13 12 930 935 940 945 950 955 VDD = 28 Vdc Pout = 45 W (PEP) IDQ = 350 mA Two-Tone Measurement 100 kHz Tone Spacing IM...960 Freescale Semiconductor, Inc... f, Frequency (MHz) Figure 5. Class AB Broadband Circuit...
Description	RF POWER FIELD EFFECT TRANSISTORS
File Size	645.04K / 12 Page	View it Online	Download Datasheet

				飞思卡尔半导体(中国)有限公司
Part No.	MRF9002NR2
OCR Text	... 35 33 31 29 27 975 965 955 945 935 15 dbm p in = 20 dbm p in , input power (dbm) figure 4. output power and power gain versus input power ...960.0 mhz, f2 = 960.1 mhz v ds , drain source supply (volts) figure 6. power gain and intermodulatio...
Description	RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET RF功率场效应晶体管阵列N沟道增强型MOSFET的侧
File Size	393.48K / 12 Page	View it Online	Download Datasheet

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