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ERICSSON[Ericsson] Ericsson Microelectronics
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Part No. |
PTF10015
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OCR Text |
...
IDQ = 380 mA POUT = 50 W
930 935 940 945 950 955 960
40 22 24 26 28 30 32 34
11 925
Drain-Source Voltage (Volts)
Frequency (MHz)
Capacitance vs. Supply Voltage
160 140 18
Bias Voltage vs. Temperature
1.03 1.02 Bias Vo... |
Description |
50 Watts/ 300-960 MHz GOLDMOS Field Effect Transistor 50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor 50 Watts, 30060 MHz GOLDMOS Field Effect Transistor
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File Size |
220.13K /
6 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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Part No. |
BLM6G10-30 BLM6G10-30G
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OCR Text |
...c) (dbc) 2-carrier w-cdma f 1 = 935; f 2 = 945 28 2 29 11.5 ? 48.5 [1] ? 52 [1] caution this device is sensitive to electrostatic di scharge...960 mhz power mmic 2. pinning information 2.1 pinning 2.2 pin description transparent top view f... |
Description |
W-CDMA 860 MHz to 960 MHz power MMIC BLM6G10-30G<SOT822-1 (HSOP16)|<<http://www.nxp.com/packages/SOT822-1.html<1<,;BLM6G10-30G<SOT822-1 (HSOP16)|<<http://www.nxp.com/packages/SOT822-1.html<1<,;
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File Size |
495.85K /
15 Page |
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it Online |
Download Datasheet |
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飞思卡尔半导体(中国)有限公司
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Part No. |
MRF9002NR2
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OCR Text |
... 35 33 31 29 27 975 965 955 945 935 15 dbm p in = 20 dbm p in , input power (dbm) figure 4. output power and power gain versus input power ...960.0 mhz, f2 = 960.1 mhz v ds , drain source supply (volts) figure 6. power gain and intermodulatio... |
Description |
RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET RF功率场效应晶体管阵列N沟道增强型MOSFET的侧
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File Size |
393.48K /
12 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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