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  800v-4.6-1.9a- Datasheet PDF File

For 800v-4.6-1.9a- Found Datasheets File :: 171    Search Time::2.078ms    
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    SavantIC
Part No. 2SC4518
OCR Text ...ollector cut-off current v cb =800v; i e =0 100 a i ebo emitter cut-off current v eb =7v; i c =0 100 a h fe dc current gain i...4.0 s t f fall time i c =1.8a; i b1 =0.27a i b2 =-0.9a v cc =250v ,r l =139 b 0.5 s sava...
Description SILICON POWER TRANSISTOR

File Size 269.03K  /  4 Page

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    IDP18E120 IDP18E12009

Infineon Technologies AG
Part No. IDP18E120 IDP18E12009
OCR Text ...tics reverse recovery time v r =800v, i f =18a, d i f /d t =800a/s, t j =25c v r =800v, i f =18a, d i f /d t =800a/s, t j =125c v r =8...4 25.3 - - - a reverse recovery charge v r =800v, i f =18a, d i f /d t =800a/s, t j =25c v r =8...
Description Fast Switching Diode

File Size 392.35K  /  8 Page

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    APT1201R4BFLLG

Microsemi Corporation
Part No. APT1201R4BFLLG
OCR Text ...tive switching @ 25c v dd = 800v, v gs = 15v i d = 9a, r g = 5 ? inductive switching @ 125c v dd = 800v, v gs = 15v i d = 9a, r g = 4.3 ? min typ max 2030 310 60 75 10 50 8 5 27 11 500 xx 545 18 unit pf nc ns j...
Description POWER MOS 7 FREDFET

File Size 247.31K  /  5 Page

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    New Jersey Semi-Conductor Products, Inc.
Part No. BUZ355
OCR Text ...nt pin 2 pin 3 type buz 355 vds 800v id 6a ^ds(on) 1.50 package to-218aa maximum ratings parameter continuous drain current rc = 29 c pulsed...4 1 100 100 1.5 v ma na a buz 355 electrical characteristics, at ti = 25c, unless otherwise specif...
Description Enhancement mode

File Size 100.29K  /  4 Page

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    STW10NK80Z

STMICROELECTRONICS
Part No. STW10NK80Z
OCR Text 800v - 0.78 ? - 9a - to-220/fp-to-247 zener-protected supermesh tm mosfet general features extremely high dv/dt capability 100% avalanch...4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description 9 A, 800 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

File Size 425.90K  /  15 Page

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    IDB09E12007

Infineon Technologies AG
Infineon Technologies A...
Part No. IDB09E12007
OCR Text ...tics reverse recovery time v r =800v, i f =9a, d i f /dt =750a/s, t j =25c v r =800v, i f =9a, d i f /dt =750a/s, t j =125c v r =800v, i f =...4 6.5 6.6 - - - 2007-09-01 rev.2.2 page 4 idb09e120 2 diode forward current i f = f( t c ) param...
Description Fast Switching EmCon Diode

File Size 204.94K  /  8 Page

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