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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FX6ASJ-2
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| OCR Text |
...ISHI Pch POWER MOSFET
FX6ASJ-2
HIGH-SPEED SWITCHING USE
FX6ASJ-2
OUTLINE DRAWING
6.5 5.0 0.2
4
Dimensions in mm
5.5 0.2
...1MHz
Limits Min. -100 -- -- -1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -1.5 0.4... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
44.75K /
4 Page |
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it Online |
Download Datasheet
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Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
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| Part No. |
FX6ASJ-2
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| OCR Text |
...ISHI Pch POWER MOSFET
FX6ASJ-2
HIGH-SPEED SWITCHING USE
FX6ASJ-2
OUTLINE DRAWING
6.5 5.0 0.2
4
Dimensions in mm
5.5 0.2
...1MHz
Limits Min. -100 -- -- -1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -1.5 0.4... |
| Description |
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
49.98K /
4 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FX6KMJ-2
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| OCR Text |
...ISHI Pch POWER MOSFET
FX6KMJ-2
HIGH-SPEED SWITCHING USE
FX6KMJ-2
OUTLINE DRAWING
10 0.3
Dimensions in mm
2.8 0.2
15 0.3...1MHz
Limits Min. -100 -- -- -1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -1.5 0.4... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
50.35K /
4 Page |
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it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
FX6KMJ-2
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| OCR Text |
...ISHI Pch POWER MOSFET
FX6KMJ-2
HIGH-SPEED SWITCHING USE
FX6KMJ-2
OUTLINE DRAWING
10 0.3
Dimensions in mm
2.8 0.2
15 0.3...1MHz
Limits Min. -100 -- -- -1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -1.5 0.4... |
| Description |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
55.59K /
4 Page |
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it Online |
Download Datasheet |
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NTE[NTE Electronics]
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| Part No. |
NTE2403 NTE2402
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| OCR Text |
...mA, f = 500MHz, TA = +25C, Note 2 VCE = 10V, IC = 14mA, RL = 75, TA = +25C, f(p+q-r) = 493,25MHz Min - - - Typ 2.4 18 150 Max - - - Unit dB dB mV
Note 2. GUM = 10 log |sfe|2 / [1 - |sie|2] [1 - |soe|2].
.016 (0.48)
C B E
.098 (2... |
| Description |
Silicon complementary PNP transistor. Low noise, UNF/VNF amplifier.
Silicon Complementary Transistors Low Noise, UHF/VHF Amplifier
Silicon Complementary Transistors Low Noise / UHF/VHF Amplifier
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| File Size |
20.92K /
2 Page |
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it Online |
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KODENSHI[KODENSHI KOREA CORP.]
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| Part No. |
K5611 K5610
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| OCR Text |
...DIAGRAM
6 5 4
K5610
1
2 5
3 4
APPLICATIONS
* Interface between two circuits of different potential * Vending Machine, Copie...1MHz IC=1mA IE=0.1mA IC=0.1mA IF=0, VCE=24V VCE=0, f=1MHz IF=5mA, VCE=5V IF=5mA, IC=1mA V=0, f=1MHz
... |
| Description |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
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| File Size |
131.13K /
3 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE2532
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| OCR Text |
...specified) Supply Voltage (Note 2), VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3...1MHz, Note 5, Note 6)
Parameter Input Capacitance Output Capacitance Symbol Ci Co Test Conditions V... |
| Description |
Integrated Circuit NMOS, 32K EPROM, 300ns
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| File Size |
34.48K /
4 Page |
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it Online |
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KODENSHI[KODENSHI KOREA CORP.]
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| Part No. |
K4N31
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| OCR Text |
...o. E107486
6.4 0.25
0.25 1
2
3
8.9 0.25 Orientation Mark
0AE 5AE -1
0.25
APPLICATIONS
* Interface between two circuits ...1MHz IC=1mA IE=0.1mA IC=0.1mA IF=0, VCE=10V VCE=0, f=1MHz IF=10mA, VCE=10V IF=50mA, IC=2mA V=0, f=1M... |
| Description |
Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)
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| File Size |
224.01K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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