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HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
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| Part No. |
JANSR2N7440
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| OCR Text |
...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) 20 ... |
| Description |
10 A, 100 V, P-CHANNEL, Si, POWER, MOSFET
Formerly Available as FSS913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
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| File Size |
70.47K /
8 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
JANSR2N7439
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| OCR Text |
...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (... |
| Description |
Formerly Available As FSL923A0R4/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
Formerly Available As FSL923A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
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| File Size |
57.63K /
8 Page |
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it Online |
Download Datasheet |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSYE923A0R4 FSYE923A0D FSYE923A0D1 FSYE923A0D3 FSYE923A0R FSYE923A0R1 FSYE923A0R3
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| OCR Text |
...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (V... |
| Description |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 6 A, 200 V, 1.18 ohm, P-CHANNEL, Si, POWER, MOSFET
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| File Size |
69.30K /
8 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSF450R4 FSF450D FSF450D1 FSF450D3 FSF450R FSF450R1 FSF450R3
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| OCR Text |
...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 26 37 37 37 TYPICAL RANGE () 43 43 36 36 36 APPLIED VGS BIAS (V... |
| Description |
9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 9 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
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| File Size |
44.48K /
8 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
FSGS230R4 FSGS230D1 FSGS230R FSGS230R3
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| OCR Text |
...ven National Labs. 5. Fluence = 1e5 ions/cm2 (Typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 37 60 82 82 TYPICAL RANGE () 36 32 28 28 APPLIED VGS BIAS (V) -20 ... |
| Description |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFET
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| File Size |
77.43K /
8 Page |
View
it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
FSGYE230R4 FSGYE230D1 FSGYE230R FSGYE230R3 FN4853
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| OCR Text |
...ven National Labs. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 37 60 82 82 TYPICAL RANGE () 36 32 28 28 APPLIED VGS BIAS (V) -20 ... |
| Description |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
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| File Size |
80.70K /
8 Page |
View
it Online |
Download Datasheet |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSJ055R4 FSJ055D FSJ055D1 FSJ055D3 FSJ055R FSJ055R1 FSJ055R3
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| OCR Text |
...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 60 60 60 60 60 TYPICAL RANGE () 43 36 36 36 31 31 31 3... |
| Description |
70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
70A/ 60V/ 0.012 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
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| File Size |
322.95K /
9 Page |
View
it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R1 FSJ163R3 FSJ260R3 FSJ260R4 FSJ160R3 FSJ160R4
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| OCR Text |
...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (V... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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| File Size |
56.45K /
8 Page |
View
it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
FSJ260R4 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 FSJ260R3 FSJ264D FSJ264D1 FSJ264D3
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| OCR Text |
...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (V... |
| Description |
33A/ 250V/ 0.080 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
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| File Size |
46.02K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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