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  10a 150v Datasheet PDF File

For 10a 150v Found Datasheets File :: 814    Search Time::1.563ms    
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    BUX48

Savantic, Inc.
Part No. BUX48
OCR Text ... L=25mH BUX48A IE=50mA; IC=0 IC=10a; IB=2A CONDITIONS SYMBOL BUX48 BUX48A MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emi...150v 1.0 3.0 0.8 s s s for BUX48 IC=10a ;IB1=- IB2=2A; VCC=150v 2 SavantIC Semiconductor ...
Description Silicon NPN Power Transistors

File Size 116.51K  /  3 Page

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    BUX1209

Seme LAB
Part No. BUX1209
OCR Text ...ter saturation voltage i c = 10a i b = 1.25a 1.5 v be(sat) (1) base-emitter saturation voltage i c = 10a i b = 1.25a ...150v t on turn-on time i b1 = 1.25a 1.0 t s storage time i c = 10a v cc = 150v ...
Description SILICON MULTI-EPITAXIAL NPN TRANSISTOR

File Size 190.83K  /  3 Page

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    INTERSIL[Intersil Corporation]
Part No. RFP10N15
OCR Text 10a, 150v, 0.300 Ohm, N-Channel Power MOSFETs These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and ...
Description 10a/ 150v/ 0.300 Ohm/ N-Channel Power MOSFETs
10a 150v 0.300 Ohm N-Channel Power MOSFETs
10a, 150v, 0.300 Ohm, N-Channel Power MOSFETs

File Size 39.97K  /  5 Page

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    FCX495

Diodes Incorporated
Part No. FCX495
OCR Text ...0 1mA 10mA 100mA 1A 10a 0 1mA 10mA 100mA 1A 10a IC - Collector current IC - Collector current VCS(sat) vs. IC 320 VCE=10V 1.0 IC/IB=10 0.8 VCS(sat) vs. IC hFE - typical gain +25C VBE(sat) - (...
Description SOT89 NPN silicon planar high voltage transistor

File Size 286.96K  /  6 Page

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    GMR10H100CTPF3 GMR10H100C GMR10H100CTB3T GMR10H100CTBF3T GMR10H100C1

Gamma Microelectronics Inc.
Part No. GMR10H100CTPF3 GMR10H100C GMR10H100CTB3T GMR10H100CTBF3T GMR10H100C1
OCR Text 10a SCHOTTKY RECTIFIER Description Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies. Featu...150v VR = 150v, TJ = 125C Test Condition IF = 5A Min Typ 0.77 Max 0.81 5.0 5 5 Units V A A mA 3 ...
Description 10a SCHOTTKY RECTIFIER

File Size 102.70K  /  6 Page

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    FS10KM-6 MITSUBISHIELECTRICCORPORATION-FS10KM-6

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS10KM-6 MITSUBISHIELECTRICCORPORATION-FS10KM-6
OCR Text .................................. 10a Viso ................................................................................ 2000V q e ...150v, ID = 5A, VGS = 10V, RGEN = RGS = 50 IS = 5A, VGS = 0V Channel to case PERFORMANCE CURVES...
Description HIGH-SPEED SWITCHING USE

File Size 44.27K  /  4 Page

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    FS20SM-6

Renesas Electronics Corporation
Part No. FS20SM-6
OCR Text ... i d = 1ma, v ds = 10v i d = 10a, v gs = 10v i d = 10a, v gs = 10v i d = 10a, v ds = 10v v ds = 25v, v gs = 0v, f = 1mhz v dd = 150v, i d = 10a, v gs = 10v, r gen = r gs = 50 w i s = 10a, v gs = 0v channle to case v (br) d...
Description MITSUBISHI Nch POWER MOSFET

File Size 80.97K  /  5 Page

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    Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FX20KMJ-3
OCR Text ... 0V ID = -1mA, VDS = -10V ID = -10a, VGS = -10V ID = -10a, VGS = -4V ID = -10a, VGS = -10V ID = -10a, VDS = -10V VDS = -10V, VGS = 0V, f = 1MHz Limits Min. -150 -- -- -1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -1.5 0.23...
Description HIGH-SPEED SWITCHING USE

File Size 49.21K  /  4 Page

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    KSC2751 KSC2751RTU

Fairchild Semiconductor
Part No. KSC2751 KSC2751RTU
OCR Text ...urrent Gain Test Condition IC = 10a, IB1= 2A, L = 50H IC = 10a, IB1= -IB2 = 2A TC =125C, l = 180H, Clamped IC = 20A, IB1 = 4A, -IB2 = 2A TC=...150v, IC = 10a IB1 = -IB2 = 2A RL = 15 15 10 7 35 Min 400 450 400 100 2 100 1 10 80 Typ Max Units V ...
Description NPN Epitaxial Silicon Transistor
High Speed High Current Switching Industrial Use

File Size 54.67K  /  5 Page

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For 10a 150v Found Datasheets File :: 814    Search Time::1.563ms    
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