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IRF[International Rectifier]
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| Part No. |
IRHY57133CMSE JANSR2N7488T3 IRHY57133CMSE-15
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| OCR Text |
...diation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 104 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-257AA
A 10.66 [.... |
| Description |
Simple Drive Requirements
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
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| File Size |
172.08K /
8 Page |
 View
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Download Datasheet
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AEROFLEX[Aeroflex Circuit Technology]
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| Part No. |
UT7C139C45GCX UT7C138C45GCA UT7C138C45WCC UT7C138C55WCA UT7C138C55WPA UT7C138 UT7C139C45GCA UT7C139C45GCC UT7C139C55WPX UT7C138C45GCC UT7C138C45GCX UT7C138C45GPA UT7C138C45GPC UT7C138C45GPX UT7C138C45WCA UT7C138C45WCX UT7C138C45WPA UT7C138C45WPC UT7C138C45WPX UT7C138C55GCA UT7C138C55GCC UT7C138C55GCX UT7C138C55GPA UT7C138C55GPC UT7C138C55GPX UT7C138C55WCC UT7C138C55WCX UT7C138C55WPC UT7C138C55WPX UT7C139 UT7C139C45GPA UT7C139C45GPC UT7C139C45GPX UT7C139C45WCA UT7C139C45WCC UT7C139C45WCX UT7C139C45WPA UT7C139C45WPC UT7C139C45WPX UT7C139C55GCA UT7C139C55GCC UT7C139C55GCX UT7C139C55GPA UT7C139C55GPC UT7C139C55GPX UT7C139C55WCA UT7C139C55WCC UT7C139C55WCX UT7C139C55WPA UT7C139C55WPC 5962G9684501QXA 5962G9684501QXC 5962G9684501QXX 5962G9684501QYA 5962G9684501QYC 5962G9684501QYX 5962G9684501VXA 5962G9684501VXC 5962G9684501VXX 5962G9684501VYA 5962G9684501VYC 5962G9684501VYX 5962G9684502QXA 5962G9684502QXC 5962G9684502QXX 5962G9684502QYA 5962G9684502QYC 5962G9684502QYX 5962G9684502VXA 5962G9684502VXC 5962G9684502VXX 5962G9684502VYA 5962G9684502VYC 5962G9684502VYX 5962G9684503QXA 5962G9684503QXC 5962G9684503QXX 5962G9684503QYA 5962G9684503QYX 5962G9684503QYC 5962F9684501QXA 5962F9684501QXX
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| OCR Text |
...n testing to MIL-STD-883 Method 1019 - Total-dose: 1.0E6 rads(Si) - Memory Cell LET threshold: 85 MeV-cm2 /mg q q - Latchup immune (LET >100...7 6 5 4 3 2 1 68
67
66
65
64
I/O2L I/O3L I/O4L I/O5L GND I/O6L I/O7L VDD GND I/O0R I/... |
| Description |
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class V. Device type 04 (4Kx9, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si).
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si).
4Kx9 dual-port SRAM. Lead finish gold. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow.
4Kx9 dual-port SRAM. Lead finish gold. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow.
4Kx8 dual-port SRAM. Lead finish optional. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
4Kx8 dual-port SRAM. Lead finish solder. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si).
4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator V. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator V. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator V. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose G. Federal stock class designator: no options.
4Kx8 dual-port SRAM. Lead finish solder. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
4Kx8 dual-port SRAM. Lead finish gold. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow.
4Kx8 dual-port SRAM. Lead finish gold. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow.
4Kx9 dual-port SRAM. Lead finish solder. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
4Kx9 dual-port SRAM. Lead finish optional. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si).
4Kx9 dual-port SRAM. Lead finish optional. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class V. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class V. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class V. Device type 04 (4Kx9, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class Q. Device type 04 (4Kx9, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
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| File Size |
355.81K /
21 Page |
View
it Online |
Download Datasheet |
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IRF[International Rectifier]
International Rectifier, Corp.
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| Part No. |
IRHSLNA58064 IRHSLNA53064 IRHSLNA54064 IRHSLNA57064
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| OCR Text |
...diation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
VDD = 25V, starting TJ = 25C, L= 0.13 mH
Peak IL = ... |
| Description |
60V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package
RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2)
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | SMT 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 75A条（丁）|贴片
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| File Size |
111.15K /
9 Page |
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MS KENNEDY CORP
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| Part No. |
MSK5822-1.9ERHS
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| OCR Text |
...dose tested to 450k rad (method 1019.7 condition a) low dropout for reduced power consumption latching overload protection available in 1.5v,1.9v,2.5v,2.8v,3.3v and 5.0v output voltages alternate output voltages available output current lim... |
| Description |
1.9 V FIXED POSITIVE LDO REGULATOR, 0.4 V DROPOUT, CSFM5
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| File Size |
618.58K /
7 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHQ57214SE
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| OCR Text |
...diation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 200 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- LCC-28
Q2
Q1 Q... |
| Description |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
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| File Size |
175.06K /
8 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHNJ67C30 IRHNJ63C30
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| OCR Text |
...diation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 480 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- SMD-0.5
PAD ASSIG... |
| Description |
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
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| File Size |
186.69K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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