...g
Unit: mm
0.40+0.10 -0.05 3
1.50+0.25 -0.05 2.8+0.2 -0.3
0.16+0.10 -0.06
1
2
(0.65)
Absolute Maximum Ratings Ta = 25C
Par...5 - 0.5 -1 200 150 -55 to +150 V A A mW C C V Unit V
10
(0.95) (0.95) 1.90.1 2.90+0.20 -0.05
...
...nit V V V
13.50.5
0.45 -0.1 1.27
+0.2
0.45 -0.1
1.27
+0.2
123
2.30.2
mA mW C C
2.540.15
1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A
s Electrical Characteristics
Parameter Collector cutoff current Co...
...K)
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
23
1 k (Typ)
400 (Typ) 3
Absolute Maximum Ratin...5 -3.0 -2.0 -3.5 -- -- V V V V s s Unit V V A A Test conditions I C = -25 mA, RBE = I E = -50 mA, I...
...661 and 2SD661A
Unit: mm
6.90.1
0.4
q q q
2.40.2 2.00.2 3.50.1
Low noise voltage NV. High foward current transfer ratio hFE. M t...5
1.5 R0.9 R0.9
1.00.1
R
0.
s Absolute Maximum Ratings
Parameter Collector to base v...
Description
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) 100 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR
...it: mm
s Features
q q
2.60.1
0.4max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB766 2SB766A ...5 -1.5 -1 1 150 -55 ~ +150 1cm2 Unit V
45
1.0-0.2
+0.1
0.40.08 0.50.08 1.50.1 3.00.15 3 ...
...mm
s Features
q q q
4.50.1 1.60.2
1.50.1
Large collector power dissipation PC. High collector to emitter voltage VCEO. Mini typ...5 -1 - 0.5
*
2.60.1
0.4max.
45
1.0-0.2
+0.1
0.40.08 0.50.08 1.50.1 3.00.15
4.0...
...oltage *Complement to 2SD882
1
TO-126
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise spe...5 10 1 -3 -7 -0.6 150 -55 ~ +150
UNIT
V V V W W A A A C C
ELECTRICAL CHARACTERISTICS(Ta=25C,u...
Description
MEDIUM POWER LOW VOLTAGE TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR