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hitachi
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| Part No. |
2SK2217
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| OCR Text |
...n) |yfs| Ciss Coss POUT D -- -- 0.3 -- 3.0 -- -- 40 -- Typ -- -- -- 1.2 4.0 250 85 60 55 Max 1 3 1.6 2.5 -- -- -- -- -- Unit mA A V V S pF pF W % Test conditions VDS = 60 V, VGS = 0 VGS = 10 V, VDS = 0 VDS = 10 V, ID = 1 mA VGS = 10 V, ID =... |
| Description |
Silicon NPN Triple Diffused
From old datasheet system
|
| File Size |
46.16K /
8 Page |
 View
it Online |
Download Datasheet
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Sanyo
|
| Part No. |
2SK2218 1025
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| OCR Text |
...2125
[2SK2218]
4.5 1.6 1.5
0.5
3
1.5
2
3.0
1
1.0
0.4
2.5 4.25max
0.4
0.75
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain C... |
| Description |
High-Frequency Low-Noise Amplifier Applications
From old datasheet system
N-Channel Junction Silicon FET
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| File Size |
212.16K /
6 Page |
View
it Online |
Download Datasheet |
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Sanyo Electric Co., Ltd.
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| Part No. |
2SK2219 1026 2SK2219-21 2SK2219-23
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| OCR Text |
...ions
unit:mm 2058A
[2SK2219]
0.425
0.3 3
0.15
2.1 1.250
0 to 0.1
0.425
1 2 0.65 0.65 2.0
0.3 0.9
0.6
0.2
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Gate-to-Drain Voltage Gate Current Drain... |
| Description |
1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
N-Channel Junction FET for Capacitor Microphone Applications(应用于电容器话筒的N沟道结型场效应管) N沟道场效应晶体管的结电容麦克风应用（应用于电容器话筒沟道结型场效应管
From old datasheet system
N-Channel Junction Silicon FET
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| File Size |
133.01K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
hitachi
|
| Part No. |
2SK2220
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| OCR Text |
...ax -- -- -- V IG = 100 A, VDS = 0 ID = 100 mA VDS = 10 V Unit V Test conditions ID = 10 mA, VGS = -10 V
-------------------------------------------------------------------------------------- --------
2SK2221 Gate to source breakdown vol... |
| Description |
Silicon NPN Triple Diffused
From old datasheet system
|
| File Size |
267.57K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
Sanyo
|
| Part No. |
2SK222 1027
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| OCR Text |
...ons
unit:mm 2019B
[2SK222]
5.0 4.0 4.0
0.45 0.5 0.6 2.0 0.45 0.44 14.0
5.0
1
2
3
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Allowable Power... |
| Description |
N-Channel Junction Silicon FET
From old datasheet system
|
| File Size |
81.08K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
Sanyo
|
| Part No. |
2SK223 1028
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| OCR Text |
...ons
unit:mm 2019B
[2SK223]
5.0 4.0 4.0
0.45 0.5 0.6 2.0 0.45 0.44 14.0
5.0
1
2
3
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Allowable Power... |
| Description |
N-Channel Junction Silicon FET
From old datasheet system
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| File Size |
99.45K /
4 Page |
View
it Online |
Download Datasheet |
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|
|
hitachi
|
| Part No. |
2SK2247
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| OCR Text |
...mina ceramic board (12.5 x 20 x 0.7mm) Marking is "QY"
2SK2247
Table 2 Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain ... |
| Description |
Silicon NPN Triple Diffused
From old datasheet system
|
| File Size |
42.19K /
5 Page |
View
it Online |
Download Datasheet |
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|
|
FUJI[Fuji Electric]
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| Part No. |
2SK2251-01
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| OCR Text |
... 100H
Min. 250 2,5
Typ. 3,0 10 0,2 10 1,2 1,5 250 50 15 25 20 50 15
Max. 3,5 500 1,0 100 2,0 380 80 25 40 30 80 25 2 4 1,4
0,7
2
IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C
0,9 80 0,2
Unit V V A mA n... |
| Description |
N-channel MOS-FET
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| File Size |
193.65K /
2 Page |
View
it Online |
Download Datasheet |
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|
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Sanyo
|
| Part No. |
2SK2260 1029
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| OCR Text |
...062A
[2SK2260]
4.5 1.6 1.5
0.5 3 1.5 2 3.0 0.75 1
1.0
0.4
2.5 4.25max
0.4
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (P... |
| Description |
N-Channel Silicon MOSFET
From old datasheet system
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| File Size |
121.12K /
4 Page |
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it Online |
Download Datasheet |
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Sanyo Semicon Device
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| Part No. |
2SK2349 1034
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| OCR Text |
...oss Crss Conditions ID=1mA, VGS=0 VDS=1500V, VGS=0 VGS=30V, VDS=0 VDS=10V, ID=1mA VDS=20V, ID=5A ID=5A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings min 1500 typ max 1.0 100 3.5 4.0 1.5 2900 400 200 2.5 Unit V mA nA V S ... |
| Description |
N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications
From old datasheet system
High-Voltage/ High-Speed Switching Applications
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| File Size |
53.07K /
4 Page |
View
it Online |
Download Datasheet |
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