0.0002 pdf Datasheet P15 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : P719F KBPC601 T89C51 MRF245 MTE872TM 17075E UPC1830 TSD1760
	Product Description
	Full Text Search

0.0002 Datasheet PDF File

For 0.0002 Found Datasheets File :: 5864 Search Time::2.063ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |

				FUJI[Fuji Electric]
Part No.	2SJ475-01
OCR Text	...e P-channel MOS-FET -60V 0,06 25A 50W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), u...
Description	FAP-III Series
File Size	296.96K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ479 2SJ479L 2SJ479S
OCR Text	...I DSS I GSS Min -30 20 -- -- -1.0 -- -- 12 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 25 40 20 1700 950 260 20 290 170 130 -1.1 70 Max -- -- -10 10 -2.0 35 60 -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF ns ns ns ns V ns I...
Description	Power switching MOSFET Silicon P Channel DV-L MOS FET High Speed Power Switching Silicon P Channel DVL MOS FET High Speed Power Switching
File Size	37.54K / 7 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ483
OCR Text	... * Low on-resistance R DS(on) = 0.08 typ (at VGS = -10 V, I D = -2.5 A) * 4V gate drive devices. * Large current capacitance ID = -5 A Outline TO-92MOD. D G 3 S 2 1 1. Source 2. Drain 3. Gate 2SJ483 Absolute Maximu...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	42.73K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ484
OCR Text	... * Low on-resistance R DS(on) = 0.18 typ. (at V GS = -10V, ID = -1A) * Low drive current * High speed switching * 4V gate drive devices. Outline UPAK 2 3 1 4 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SJ484 Absolute M...
Description	Silicon P-Channel MOS FET High Speed Power Switching
File Size	42.55K / 9 Page	View it Online	Download Datasheet

				Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
Part No.	2SJ485 2SJ485TP-FA
OCR Text	... unit:mm 2083B [2SJ485] 6.5 5.0 4 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 1 2 3 7.5 0.5 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP unit:mm 2092B [2SJ485] 6.5 5.0 4 2.3 ...
Description	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 4A I(D) \| TO-252VAR P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	42.21K / 4 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ486
OCR Text	... * Low on-resistance R DS(on) = 0.5 typ. (at V GS = -4V, ID = -100 mA) * 2.5V gate drive devices. * Small package (MPAK). Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SJ486 Absolute Maximum Ratings (Ta = 25C) ...
Description	RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开 Silicon P Channel MOS FET Low FrequencyPower Switching Silicon P-Channel MOS FET
File Size	40.30K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text	... Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note2 Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg -60 # 20 V V V...
Description	From old datasheet system SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	70.31K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ493 D11265EJ3V0DS00
OCR Text	... Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note2 Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg -60 # 20 V V V...
Description	From old datasheet system SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	64.87K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ494 D11266EJ2V0DS00
OCR Text	...* Low Ciss Ciss = 2360 pF Typ. 0.70.1 2.54 * Built-in Gate Protection Diode 13.5 MIN. 12.00.2 ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage Gate to Source Voltage* Gate to Source Voltage Drain Current (DC) Drain ...
Description	From old datasheet system SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	68.73K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text	...DIMENSIONS (in millimeter) 10.0 0.3 3.2 0.2 4.5 0.2 2.7 0.2 FEATURES * Super Low On-State Resistance 3 0.1 4 0.2 RDS(on)2 = 56 m MAX. (VGS = -4 V, ID = -15 A) * Low Ciss Ciss = 4120 pF TYP. * Built-in Gate Protection Diode ...
Description	From old datasheet system MOS Field Effect Power Transistors SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	72.23K / 8 Page	View it Online	Download Datasheet

For 0.0002 Found Datasheets File :: 5864 Search Time::2.063ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |