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  w 3-state Datasheet PDF File

For w 3-state Found Datasheets File :: 106457    Search Time::1.5ms    
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    Mitsubishi Electric Corporation
Part No. FS50SMJ-3
OCR Text ...c converter, etc. v v a a a a a w c c g 150 20 50 200 50 50 200 150 C55 ~ +150 C55 ~ +150 4.8 v gs = 0v v ds = 0v l = 100 m h typical v...3 high-speed switching use v m a ma v m w m w v s pf pf pf ns ns ns ns v c/w ns 150 1.0 ...
Description Power MOSFETs: FS Series, Low Voltage, 150V for High-Speed Switching Use

File Size 51.02K  /  4 Page

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    FS20VSJ-3-A1 FS20VSJ-3-T11

Renesas Electronics Corporation
Part No. FS20VSJ-3-A1 FS20VSJ-3-T11
OCR Text ... to +150 1.2 Unit V V A A A A A w C C g Conditions VGS = 0 V VDS = 0 V L = 30 H Typical value Rev.1.00, Aug.20.2004, page 1 of 6 FX20VSJ-3 Electrical Characteristics (Tch = 25C) Parameter Drain-source breakdown voltage Gat...
Description High-Speed Switching Use Pch Power MOS FET

File Size 196.28K  /  7 Page

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    FS5ASJ-3-T13

Renesas Electronics Corporation
Part No. FS5ASJ-3-T13
OCR Text ...to +150 0.32 Unit V V A A A A A w C C g Conditions VGS = 0 V VDS = 0 V L = 100 H Typical value Rev.2.00 Aug 07, 2006 page 1 of 6 FS5ASJ-3 Electrical Characteristics (Tch = 25C) Parameter Drain-source breakdown voltag...
Description High-Speed Switching Use Nch Power MOS FET

File Size 166.01K  /  7 Page

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    FX3ASJ-3-T13

Renesas Electronics Corporation
Part No. FX3ASJ-3-T13
OCR Text ...to +150 0.32 Unit V V A A A A A w C C g Conditions VGS = 0 V VDS = 0 V L = 100 H Typical value Rev.2.00 Aug 07, 2006 page 1 of 6 FX3ASJ-3 Electrical Characteristics (Tch = 25C) Parameter Drain-source breakdown voltag...
Description High-Speed Switching Use Pch Power MOS FET

File Size 166.92K  /  7 Page

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    Mitsubishi Electric Corporation
Part No. FS50VSJ-3
OCR Text ...c converter, etc. v v a a a a a w c c g 150 20 50 200 50 50 200 125 C55 ~ +150 C55 ~ +150 1.2 v gs = 0v v ds = 0v l = 100 m h typical v...3 1.5max. qwe r 4.5 0 +0.3 ? 3.0 +0.3 ?.5 1 5 0.8 8.6 ?0.3 9.8 ?0.5 1.5max. (1.5) 0.5 4.5...
Description Power MOSFETs: FS Series, Low Voltage, 150V for High-Speed Switching Use

File Size 47.04K  /  4 Page

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    FX6ASJ-3-T13

Renesas Electronics Corporation
Part No. FX6ASJ-3-T13
OCR Text ...to +150 0.32 Unit V V A A A A A w C C g Conditions VGS = 0 V VDS = 0 V L = 100 H Typical value Rev.2.00 Aug 07, 2006 page 1 of 6 FX6ASJ-3 Electrical Characteristics (Tch = 25C) Parameter Drain-source breakdown voltag...
Description High-Speed Switching Use Pch Power MOS FET

File Size 166.40K  /  7 Page

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    FS30VSJ-3

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS30VSJ-3
OCR Text ............. 100ns q q GATE w DRAIN e SOURCE r DRAIN e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC con...3 HIGH-SPEED SwITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS ...
Description HIGH-SPEED SwITCHING USE

File Size 38.62K  /  4 Page

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    FS30VS-3

Mitsubishi Electric Semiconductor
Part No. FS30VS-3
OCR Text ............. 110ns q q GATE w DRAIN e SOURCE r DRAIN e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC con...3 HIGH-SPEED SwITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS ...
Description HIGH-SPEED SwITCHING USE

File Size 37.91K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. FS30KMJ-3
OCR Text ...6 0.3 6.5 0.3 123 q gate w drain e source e w q e v v a a a a a w c c v g 150 20 30 120 30 30 120 30 C55 ~ +150 C55 ~ +150 2000 2.0 v gs = 0v v ds = 0v l = 100 m h ac for 1minute, terminal to case typical value drain-source vo...
Description MITSUBISHI Nch POwER MOSFET HIGH-SPEED SwITCHING USE

File Size 50.07K  /  4 Page

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    FS50UM-3-A8 FS50UM-3

Renesas Electronics Corporation
Part No. FS50UM-3-A8 FS50UM-3
OCR Text ... to +150 2.0 Unit V V A A A A A w C C g Conditions VGS = 0 V VDS = 0 V L = 100 H Typical value Rev.2.00 Aug 07, 2006 page 1 of 6 FS50UM-3 Electrical Characteristics (Tch = 25C) Parameter Drain-source breakdown voltage...
Description High-Speed Switching Use Nch Power MOS FET

File Size 165.97K  /  7 Page

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