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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT15Q311
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Description |
INSULATED GATE bipolar TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT
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File Size |
167.37K /
7 Page |
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Samsung Electronics Inc
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Part No. |
KA3884D KA3884 KA3882D
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Description |
SMPS CONTROLLER,CURRENT-MODE,bipolar,SOP,8PIN,PLASTIC SMPS CONTROLLER,CURRENT-MODE,bipolar,DIP,8PIN,PLASTIC From old datasheet system
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File Size |
278.36K /
6 Page |
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it Online |
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Sanyo Semiconductor Corp
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Part No. |
LA7860M LA7860
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Description |
VERTICAL/HORIZONTAL DEFLECTION PROCESSOR,bipolar,SOP,30PIN,PLASTIC VERTICAL/HORIZONTAL DEFLECTION PROCESSOR,bipolar,SDIP,30PIN,PLASTIC From old datasheet system
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File Size |
132.16K /
4 Page |
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it Online |
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MDE Semiconductor
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Part No. |
SMDJ100A SMDJ110A SMDJ130A SMDJ120A SMDJ150 SMDJ170 SMDJ160 SMDJ150A SMDJ160A SMDJ170A
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Description |
100.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications 110.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications 130.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications 120.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications 150.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications 170.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications 160.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
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File Size |
586.08K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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