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SamHop Microelectronics
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| Part No. |
SP2106
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| OCR Text |
suface mount package. s mhop microelectronics c orp. a sp2106 symbol v ds v gs i dm 50 w a p d c 0.25 -55 to 150 i d units parameter 100 1 4.1 c/w v v 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics product s... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
107.30K /
7 Page |
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it Online |
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SamHop Microelectronics
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| Part No. |
STD307S STU307S
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| OCR Text |
...r ds(on) . rugged and reliable. suface mount package. p-channel logic level enhancement mode field effect transistor www.samhop.com.tw jan,29,2010 1 details are subject to change without notice. g g s s d d esd protected. g g s s s t u s e ... |
| Description |
P-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
129.52K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
STM6960A
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| OCR Text |
...r ds(on) . rugged and reliable. suface mount package. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
97.96K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STF2459A
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| OCR Text |
suface mount package. s mhop microelectronics c orp. a stf2459a symbol v ds v gs i dm 75 w a p d c 1.67 -55 to 150 i d units parameter 24 12 58 c/w v v 16 t a =25 c gate-source voltage drain-source voltage thermal characteristics product ... |
| Description |
Super high dense cell design for low RDS(ON).
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
93.83K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STK103
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| OCR Text |
... @ vgs=4.5v 210 @ vgs=10v s g d suface mount package. features super high dense cell design for low r ds(on) . rugged and reliable. ver 1.1
symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) v 168 g fs s c iss 310 pf c oss 38 p... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
97.23K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STUD417L
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| OCR Text |
...r ds(on) . rugged and reliable. suface mount package. p-channel logic level enhancement mode field effect transistor www.samhop.com.tw aug,24,2012 1 details are subject to change without notice. g g s s s t u s e ri e s to - 2 5 2 aa ( d - ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
103.14K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STUD417S
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| OCR Text |
...r ds(on) . rugged and reliable. suface mount package. p-channel logic level enhancement mode field effect transistor www.samhop.com.tw aug,23,2010 1 details are subject to change without notice. g g s s s t u s e ri e s to - 2 5 2 aa ( d - ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
123.08K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STG2454
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| OCR Text |
suface mount package. s mhop microelectronics c orp. a stg2454 symbol v ds v gs i dm 85 w a p d c 1.5 -55 to 150 i d units parameter 24 7 28.5 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product su... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
114.02K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STM105N
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| OCR Text |
...r ds(on) . rugged and reliable. suface mount package. n-channel enhancement mode field effect transistor absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a sigle pulse avalanche en... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
120.76K /
8 Page |
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it Online |
Download Datasheet |
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