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    IR2137IGBT IR2137

IRF[International Rectifier]
Part No. IR2137IGBT IR2137
OCR Text ...is detected, a soft turn-off is preferred because it reduces a high voltage spike across the collector and emitter of the IGBT device at fault. Thus it provides a wider margin for the RBSOA limit during a short-circuit condition, allowing t...
Description IGBT Protection in AC or BLDC Motor Drives

File Size 85.70K  /  9 Page

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    IRFP250N IRFP250

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFP250N IRFP250
OCR Text ...ications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting...
Description    Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)
N-Channel(Hexfet Transistors)
Power MOSFET(Vdss = 200 V Rds(on)=0.075ohm Id=30A)
Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) 功率MOSFET(减振钢板基本\u003d 200第五的Rdson)\u003d 0.075ohm,身份证\u003d 30A条)

File Size 120.07K  /  8 Page

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    ITA25B3 ITA10B3 ITA18B3 ITA6V5B3 3021

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
Part No. ITA25B3 ITA10B3 ITA18B3 ITA6V5B3 3021
OCR Text ...ween two input Pins at 0V Bias. preferred types in bold. 2/6 (R) ITA6V5B3 / ITA10B3 / ITA18B3 /ITA25B3 Fig. 1 : Typical peak pulse power versus exponential pulse duration. 1E+04 P P P (W) ITA25B3 ITA18B3 Fig. 2 : Clamping volta...
Description BIDIRECTIONAL TRANSIL ARRAY FOR DATALINE PROTECTION
From old datasheet system
BIDIRECTIONAL TRANSIL TM ARRAY FOR DATALINE PROTECTION
BIDIRECTIONAL TRANSILTM ARRAY FOR DATALINE PROTECTION

File Size 71.78K  /  6 Page

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    MHW803

Motorola, Inc
Part No. MHW803
OCR Text ...ould be limited to 2 watts. The preferred method of power output control is to fix Vs1 = Vs2 = Vs3 = 7.5 Vdc (Pins 2, 3, 4), Pin (Pin 1) at 1 mW, and vary VCont (Pin 1) voltage. DECOUPLING Due to the high gain of the three stages and the...
Description 2 W / 806 to 905 MHz UHF POWER AMPLIFIERS
2 W, 806 to 905 MHz UHF POWER AMPLIFIERS

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    MHW804 MHW804-1 MHW804-2

MOTOROLA[Motorola, Inc]
Part No. MHW804 MHW804-1 MHW804-2
OCR Text ...ld be limited to 4.0 watts. The preferred method of power output control is to fix Vs1 = Vs2 = Vs3 = Vs4 = V s5 = 7.5 Vdc (Pins 2, 3, 4, 5, 6), Pin (Pin 1) at 1.0 mW, and vary Vcont (Pin 1) voltage. DECOUPLING Due to the high gain of the...
Description 4.0 WATTS 800 to 940 MHz RF POWER AMPLIFIERS

File Size 103.40K  /  6 Page

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    MHW912

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Part No. MHW912
OCR Text ...limited to specified value. The preferred method of power control is to fix Vb = Vs1 = 8.0 Vdc (Pins 2, 4), Vs2 = Vs3 = 12.5 Vdc (Pins 3, 5), Pin (Pin 1) at 1.0 mW, and vary Vcont (Pin 1) voltage. DECOUPLING Due to the high gain of the f...
Description 12.5 W 884 to 915 MHz RF POWER AMPLIFIER

File Size 128.35K  /  6 Page

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    MHW932

MOTOROLA[Motorola, Inc]
Part No. MHW932
OCR Text ...limited to specified value. The preferred method of power control is to fix Vs1 = Vs2 = Vs3 = Vs4 = 12.5 Vdc (Pins 2, 3, 5, 6), Vb = 5.0 Vdc (Pin 4), and vary Pin (Pin 1) from 0 to 100 mW. MHW932 4 MOTOROLA RF DEVICE DATA PACKAGE D...
Description 32 W 890 to 915 MHz RF POWER AMPLIFIER

File Size 117.29K  /  6 Page

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    MJW16110 MJ16110 ON1988

Motorola Mobility Holdings, Inc.
http://
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
Part No. MJW16110 MJ16110 ON1988
OCR Text ... MJ16110* MJW16110 * *Motorola preferred Device NPN Silicon Power Transistors SWITCHMODE Bridge Series * * * * * * . . . specifically designed for use in half bridge and full bridge off line converters. Excellent Dynamic Saturation Ch...
Description POWER TRANSISTORS 15 AMPERES 400 VOLTS 175 AND 135 WATTS 15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-247AE
From old datasheet system
NPN Silicon Power Transistors

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    MJW16212

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
http://
Part No. MJW16212
OCR Text ...* * * * MJW16212* *Motorola preferred Device POWER TRANSISTOR 10 AMPERES 1500 VOLTS - VCES 50 AND 150 WATTS IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I...
Description POWER TRANSISTOR 10 AMPERES 1500 VOLTS - VCES 50 AND 150 WATTS 10 A, 650 V, NPN, Si, POWER TRANSISTOR, TO-247AE

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    MJW18020 JW18020 MJW18020-D

ONSEMI[ON Semiconductor]
Part No. MJW18020 JW18020 MJW18020-D
OCR Text preferred Devices NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS's for which the high reproducibil...
Description NPN Silicon Power Transistors High Voltage Planar 30A 1000 Volts BVces 450 Volts BVceo 250 Watts

File Size 55.68K  /  8 Page

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