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hemt Datasheet PDF File

For hemt Found Datasheets File :: 992 Search Time::1.703ms
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				M/A-COM Technology Solutions, Inc.
Part No.	MAGX-002731-SB1PPR MAGX-002731-030L00
OCR Text	hemt pulsed power transistor 2.7 - 3.1 ghz, 30w peak, 500u s pulse, 10% duty cycle magx-002731-030l00 production v1 23 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.19...
Description	GaN hemt Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
File Size	339.28K / 7 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	ZNBG3118 ZNBG3118JA16TC
OCR Text	...control and protect the GaAs or hemt FET low noise amplifier's (LNA's). The ZNBG3118 integrates an accurate voltage detector to select the LNB polarisation channel and an advanced tone detector to select the local oscillator (LO) for band s...
Description	LNA GaAs FET BIAS CONTROLLER WITH POLARIZATION AND BAND SELECT
File Size	114.39K / 10 Page	View it Online	Download Datasheet

				Eudyna Devices Inc Fujitsu Media Devices Limited
Part No.	FHX06X FHX04X FHX05X
OCR Text	hemt Chips FEATURES * * * * Low Noise Figure: 0.75dB (Typ.)@f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg 0.25m, Wg = 200m Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High E...
Description	KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET GaAs FET & hemt Chips
File Size	52.84K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FHX13X FHX14X
OCR Text	hemt Chips FEATURES * * * * Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg 0.15m, Wg = 200m Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Ele...
Description	GaAs FET & hemt Chips
File Size	59.15K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF4941AL
OCR Text	hemt DESCRIPTION The MGF4941AL super-low noise hemt (High Electron Mobility Transistor) is designed for use in Ku band amplifiers. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.) High associated gain @ ...
Description	SUPER LOW NOISE InGaAs hemt
File Size	121.24K / 6 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF4951A04 MGF4952A MGF4951A
OCR Text	hemt (Leadless Ceramic Package) DESCRIPTION The MGF4951A/MGF4952A super-low noise hemt (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. ...
Description	SUPER LOW NOISE InGaAs hemt
File Size	180.71K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF4961B
OCR Text	hemt DESCRIPTION The MGF4961B super-low noise hemt (High Electron Mobility Transistor) is designed for use in K band amplifiers. Outline Drawing 4.00.2 (1.05) 1.90.1 (1.05) (unit: mm) FEATURES Low noise figure @ f=20GHz NFmin...
Description	SUPER LOW NOISE InGaAs hemt
File Size	108.38K / 4 Page	View it Online	Download Datasheet

				EUDYNA[Eudyna Devices Inc]
Part No.	ESN35A090IV EGN35A090IV
OCR Text	hemt 90W Preliminary FEATURES High Voltage Operation : VDS=50V High Power : 50.0dBm (typ.) @ P3dB High Efficiency: 50%(typ.) @ P3dB Linear Gain : 12.0dB(typ.) @ f=3.5GHz Proven Reliability ES/EGN35A090IV High Voltage - High Power G...
Description	High Voltage - High Power GaN-hemt
File Size	104.70K / 4 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	CFY66 CFY66-08 CFY66-08P CFY66-10 CFY66-10P
OCR Text	hemt * * HiRel Discrete and Microwave Semiconductor Conventional AlGaAs/GaAs hemt (For new design we recommend to use our pseudo-morphic hemt CFY67) For professional super low-noise amplifiers For frequencies from 500 MHz to > 20 GHz Herme...
Description	HiRel K-Band GaAs Super Low Noise hemt
File Size	537.83K / 7 Page	View it Online	Download Datasheet

				Diodes
Part No.	ZABG6002
OCR Text	...e bias requirements of GaAs and hemt FETs commonly used in satellite receiver LNBs with a minimum of external components whilst operating from a minimal voltage supply and using minimal current. The ZABG6002 has six FET bias stages that can...
Description	LOW POWER 6 STAGE FET LNA AND MIXER BIAS CONTROLLER
File Size	176.41K / 12 Page	View it Online	Download Datasheet

For hemt Found Datasheets File :: 992 Search Time::1.703ms
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