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  avalanche-energy-rated Datasheet PDF File

For avalanche-energy-rated Found Datasheets File :: 12723    Search Time::2.141ms    
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    APT50GF60HR

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT50GF60HR
OCR Text ...ltage Drop * Low Tail Current * Avalanche Rated * Hermetic Package MAXIMUM RATINGS Symbol VCES V CGR VGE I C1 I C2 I CM I LM EAS PD TJ,TST...Energy Total Power Dissipation 2 Operating and Storage Junction Temperature Range Max. Lead T...
Description Fast IGBT 600V 55A
The Fast IGBT is a new generation of high voltage power IGBTs.

File Size 25.29K  /  2 Page

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    BUP401

Siemens Semiconductor G...
Siemens Semiconductor Group
Part No. BUP401
OCR Text Avalanche rated Pin 1 G Type BUP 401 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V...energy, single pulse EAS 24 mJ IC = 15 A, VCC = 50 V, RGE = 25 L = 200 H, Tj = 25 C Powe...
Description From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)

File Size 148.84K  /  8 Page

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    C67078-S1343-A2 BUZ92

Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. C67078-S1343-A2 BUZ92
OCR Text Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 92 VDS 600 V ID 3.3 A RDS(on) 3 Package TO-220 AB Ordering Co...energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 3.3 6 mJ ID = 3...
Description Power MOSFET
From old datasheet system
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

File Size 176.27K  /  9 Page

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    HIP5061 HIP5061DS

INTERSIL[Intersil Corporation]
Part No. HIP5061 HIP5061DS
OCR Text ... . . Class 2 - 2KV Single Pulse Avalanche Energy Rating, s (Note 2) . . . EAS 100mJ Thermal Information Thermal Resistance JC Plastic SIP Package . . . . . . . . . . . . . . . . . . . . . . . . 2oC/W Maximum Package Power Dissipation at...
Description 7A, High Efficiency Current Mode Controlled PWM Regulator

File Size 157.54K  /  20 Page

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    HUF75343S3 HUF75343S3S HUF75343G3 HUF75343P3 HUF75343S3ST HUF75343S3NL

FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HUF75343S3 HUF75343S3S HUF75343G3 HUF75343P3 HUF75343S3ST HUF75343S3NL
OCR Text ...withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching con...
Description 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs 75 A, 55 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape &amp; Reel 75 A, 55 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

File Size 228.29K  /  10 Page

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    IRF640A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF640A
OCR Text Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Lea...Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipati...
Description Advanced Power MOSFET

File Size 259.33K  /  7 Page

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    IRF640L IRF640S

IRF[International Rectifier]
Part No. IRF640L IRF640S
OCR Text ...emperature Fast Switching Fully Avalanche Rated D VDSS = 200V RDS(on) = 0.18 G S ID = 18A Description Third Generation HEXFE...Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction a...
Description Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=18A)
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
HEXFET? Power MOSFET

File Size 224.71K  /  10 Page

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    IRF640N IRF640NL IRF640NS

IRF[International Rectifier]
Part No. IRF640N IRF640NL IRF640NS
OCR Text ...rature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l Fifth Generation HEXFET (R)...Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction a...
Description Power MOSFET(Vdss=200V/ Rds(on)=0.15ohm/ Id=18A)
Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

File Size 153.14K  /  11 Page

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    IRHN9230

IRF[International Rectifier]
Part No. IRHN9230
OCR Text AVALANCHE AND dv/dt RATED HEXFET(R) TRANSISTOR -200 Volt, 0.8, RAD HARD HEXFET International Rectifier's P-Channel RAD HARD technology...energy pulse circuits in space and weapons environments. IRHN9230 P-CHANNEL RAD HARD Product...
Description TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)

File Size 87.57K  /  4 Page

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    IRL2910 L2910

International Rectifier
Part No. IRL2910 L2910
OCR Text ...rature l Fast Switching l Fully Avalanche Rated Description l l D VDSS = 100V RDS(on) = 0.026 G ID = 55A S Fifth Generation...Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction a...
Description RES THICK FILM POWER 10 OHM 5W
HEXFET Power MOSFET

File Size 120.70K  /  8 Page

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