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eupec GmbH
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| Part No. |
FZ800R17KF6CB2
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| OCR Text |
...nductive load) IC = 800A, VCE = 900V VGE = 15V, RG = 1,8, Tvj = 25C VGE = 15V, RG = 1,8, Tvj = 125C Anstiegszeit (induktive Last) rise time ...2,1 2,1
max.
2,5 2,5 V V
2(8)
FZ800R17KF6CB2
Technische Information / Technical Informa... |
| Description |
IGBT-Modules
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| File Size |
114.93K /
9 Page |
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it Online |
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eupec GmbH
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| Part No. |
FZ1600R17KF6C
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| OCR Text |
...uctive load) IC = 1600A, V CE = 900V VGE = 15V, RG = 0,9, Tvj = 25C VGE = 15V, RG = 0,9, Tvj = 125C Anstiegszeit (induktive Last) rise time ...2 1,2 s s tr 0,19 0,19 s s td,on 0,3 0,3 s s
min.
typ.
max.
RCC+EE
0,08
m
Chara... |
| Description |
IGBT-Modules
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| File Size |
149.20K /
9 Page |
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it Online |
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eupec GmbH
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| Part No. |
FF200R17KE3
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| OCR Text |
...inductive load) IC =200A, VCE = 900V VGE = 15V, RG = 6,8W, Tvj = 25C VGE = 15V, RG = 6,8W, Tvj = 125C Anstiegszeit (induktive Last) rise tim...2 - 3 ISC LsCE 740 20 A nH Eoff 65 mJ Eon 80 mJ tf 0,12 0,20 s s td,off 0,85 1,00 s s tr 0,10 0,10 s... |
| Description |
IGBT-Modules
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| File Size |
250.53K /
9 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STW11NK90Z
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| OCR Text |
900v - 0.82 ? - 9.2a - to-247 zener-protected supermesh? power mosfet general features 100% avalanche tested extremely high dv/dt capabil...2/12 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... |
| Description |
N-channel 900 V, 0.82 Ohm typ., 9.2 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 package
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| File Size |
222.99K /
12 Page |
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it Online |
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eupec GmbH
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| Part No. |
FZ800R16KF4
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| OCR Text |
...inductive load) i c =800a,v ce =900v,v l =15v t on v l =15v, r g =2,4 w , t vj =25c - 0,8 - s v l =15v, r g =2,4 w , t vj =125c - 1 - s speicherzeit (induktive last) storage time (inductive load) i c =800a,v ce =900v,v l =15v t s v l =15v... |
| Description |
IGBT Modules
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| File Size |
218.48K /
4 Page |
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it Online |
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Fuji Electric
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| Part No. |
2MBI600U4G-170
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| OCR Text |
... vs. gate resistance (typ.) vcc=900v, ic=600a, vge=15v, tj=125c vcc=900v, vge=15v, rgon=12, rgoff=4.7, tj=125c 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 4 . 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 switching time : ton, tr, toff, tf [us] c... |
| Description |
IGBT MODULE
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| File Size |
383.22K /
6 Page |
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it Online |
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Micross Components
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| Part No. |
MIMMG150SR170B
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| OCR Text |
... q ge gate charge v c e = 900v , i c = 150a , v g e = 15v 0 . 9 c c i e s f n 0 1 e c n a t i c a p a c t u ...2.2 v v f f o r w ard v olt age i f = 150a , v g e =0v , t v j =125c 2.45 v... |
| Description |
1700V 150A IGBT Module RoHS Compliant
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| File Size |
2,055.53K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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