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  650 Datasheet PDF File

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    C3D10065I

Cree, Inc
Part No. C3D10065I
OCR Text 650-volt schottky rectifer ? ceramic package provides 2.5kv isolation ? zero reverse recovery current ? high-frequency operation ? temperature-independent switching behavior ? positive temperature coeffcient on v f beneft...
Description Silicon Carbide Schottky Diode

File Size 402.70K  /  6 Page

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    TPSA475K010R1400

AVX Corporation
Part No. TPSA475K010R1400
OCR Text ...75 4.00 2.00 4.00 1.50 1.00 h 1.650.10 2.450.10 1.100.05 8.00 1.75 3.50 0.75 4.00 2.00 4.00 1.50 1.00 j 1.05 1.90 0.80 8.00 1.75 3.50 0.75 4.00 2.00 4.00 1.50 0.80 k 0.75 1.26 0.67 8.00 1.75 3.50 0.75 2.00 2.00 2.00 1.50 0.50 l 1.05 1...
Description Tantalum and Niobium Oxide Capacitors

File Size 105.38K  /  5 Page

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    AUK[AUK corp]
Part No. SD60C52P SD60C32 SD60C32P SD60C52
OCR Text ... 0.656 (16.662) 0.165 (4.191) 0.650 (16.510) 0.120 (3.048) 0.090 (2.286) MIN 0.020 (0.508) 1 20 0.5MIN 4.5 0.3 3/4 3/4 3.5 0.3 0.050 (1.270) 0.630 (16.002) 0.590 (14.906) PLCC44 KSI-W015-000 50.73/40.2 3/4 1.22TYP 1.4 0....
Description CMOS SINGLE-COMPONENT 8-BIT MICROCOMPUTER

File Size 81.85K  /  13 Page

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    SONY[Sony Corporation]
Part No. SLD1133VL-53
OCR Text ...C) Min. Typ. 50 60 2.3 640 24 7 650 30 8 Max. 65 70 2.8 660 40 10 80 2 3 0.15 0.4 7 0.08 0.1 0.7 15 0.25 Unit mA mA V nm degree degree m degree degree mW/mA m mA Differential efficiency Astigmatism Monitor current Handling Precautions...
Description 650nm Index-Guided Red Laser Diode

File Size 90.74K  /  6 Page

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    FSL176MRT

Fairchild Semiconductor
Part No. FSL176MRT
OCR Text ... v str v str pin voltage 650 v v ds drain pin voltage 650 v v cc v cc pin voltage 26 v v fb feedback pin voltage - 0.3 12.0 v i dm drain current pulsed 12.8 a i ds continuous switching drain current (6)...
Description Green-Mode Fairchild Power Switch (FPS?

File Size 798.32K  /  16 Page

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    TK14A65W

Toshiba Semiconductor
Part No. TK14A65W
OCR Text ... ch t stg v iso(rms) tor rating 650 30 13.7 54.8 40 231 3.7 13.7 54.8 150 -55 to 150 2000 0.6 unit v a w mj a v n m note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the ...
Description MOSFETs Silicon N-Channel MOS (DTMOS)

File Size 239.26K  /  10 Page

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    PMZB790SN

NXP Semiconductors
Part No. PMZB790SN
OCR Text ... = 10 v; t amb = 25 c [1] - - 650 ma static characteristics r dson drain-source on-state resistance v gs = 10 v; i d = 300 ma; t j = 25 c - 0.79 0.94 [1] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for ...
Description 60 V, single N-channel Trench MOSFET

File Size 209.49K  /  13 Page

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    SONY[Sony Corporation]
Part No. SLD1133VL
OCR Text ... Conditions Min. Typ. 50 60 2.3 650 30 8 Tc: Case temperature Max. 65 70 2.8 660 40 12 80 2 3 0.7 15 0.3 Unit mA mA V nm degree degree m degree degree mW/mA m mA Differential efficiency Astigmatism Monitor current Handling Precauti...
Description 650nm Index-Guided Red Laser Diode

File Size 112.42K  /  6 Page

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    SONY[Sony Corporation]
Part No. SLD1133VS
OCR Text ... Conditions Min. Typ. 50 60 2.3 650 30 8 Tc: Case temperature Max. 65 70 2.8 660 40 12 80 3 3 0.7 15 0.3 Unit mA mA V nm degree degree m degree degree mW/mA m mA Differential efficiency Astigmatism Monitor current Handling Precauti...
Description 650nm Index-Guided Red Laser Diode

File Size 90.49K  /  6 Page

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    SemeLAB
SEME-LAB[Seme LAB]
Part No. SML80A12 SML100A9
OCR Text ... 800V 11.5A ID(cont) RDS(on) 0.650 * Faster Switching * Lower Leakage * TO-3 Hermetic Package 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) Pin 1 - Gate 16.64 (0.655) 17.15 (0.675) Pin 2 - Source Case - Drain D ...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω))

File Size 20.46K  /  2 Page

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