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56m Datasheet PDF File

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				TY Semiconductor Co., Ltd
Part No.	APM2301CAC
OCR Text	... i o n s -20v/-2.8a r ds(on) = 56m w (typ.) @ v gs = -4.5v r ds(on) = 85m w (typ.) @ v gs = -2.5v r ds(on) = 106m w (typ.) @ v gs = -1.8v super high dense cell design reliable and rugged apm2301ca hand ling code temp . range package ...
Description	Pin Description
File Size	245.14K / 3 Page	View it Online	Download Datasheet

				Cystech Electonics Corp.
Part No.	MTD55N10J3
OCR Text	... v gs =4.5v, i d =12a 56m g d s mtd55n10j3 g gate d drain s source environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pc s / t...
Description	N -Channel Logic Level Enhancement Mode Power MOSFET
File Size	257.33K / 9 Page	View it Online	Download Datasheet

				Unisonic Technologies
Part No.	UTT10NP06 UTT10NP06G-S08-R UTT10NP06L-S08-T UTT10NP06L-S08-R UTT10NP06G-S08-T UTT10NP06L-TN4-R UTT10NP06G-TN4-T UTT10NP06L-TN4-T
OCR Text	...s. ? features * r ds(on) < 56m ? @v gs =10v, i d =4a r ds(on) <64m ? @v gs =4.5v, i d =2a * r ds(on) <68m ? @v gs = -10v, i d = -3a r ds(on) <88m ? @v gs = -4.5v, i d = -2a * high switching speed ? symbol sop-8 to-25...
Description	DUAL ENHANCEMENT MODE (N-CHANNEL/ P-CHANNEL)
File Size	249.46K / 7 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	DMP2038USS-15
OCR Text	... 38m ? @ v gs = -4.5v -6.5a 56m ? @ v gs = -2.5v -5.0a description and applications this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making i...
Description	20V P-CHANNEL ENHANCEMENT MODE MOSFET
File Size	279.21K / 6 Page	View it Online	Download Datasheet

				Infineon
Part No.	BCP52M
OCR Text	...plementary types: bcp 54m...bcp 56m(npn) vpw05980 1 2 3 5 4 type marking pin configuration package bcp 51m bcp 52m bcp 53m aas aes ahs 1 = b 1 = b 1 = b 2 = c 2 = c 2 = c 3 = e 3 = e 3 = e 4=n.c. 4=n.c. 4=n.c. 5 = c 5 = c 5 = ...
Description	PNP Silicon AF Transistor for AF driv...
File Size	94.27K / 4 Page	View it Online	Download Datasheet

				Wuxi NCE Power Semicond...
Part No.	NCE0117K
OCR Text	...on) < 70m ? @ v gs =10v (typ:56m ? ) high density cell design for ultra low rdson fully characterized avalanche voltage and current good stability and uniformity with high e as excellent package for good heat dissipatio...
Description	NCE N-Channel Enhancement Mode Power MOSFET
File Size	444.22K / 7 Page	View it Online	Download Datasheet

				Wuxi NCE Power Semicond...
Part No.	NCE0117
OCR Text	...on) < 70m ? @ v gs =10v (typ:56m ? ) high density cell design for ultra low rdson fully characterized avalanche voltage and current good stability and uniformity with high e as excellent package for good heat dissipatio...
Description	NCE N-Channel Enhancement Mode Power MOSFET
File Size	341.35K / 7 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STP90NS04ZC
OCR Text	...esistance v gs = 10v, i d = 40a 56m ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds =15v, i d = 40a 100 s c iss c oss c rss in...
Description	N-channel clamped 5mOhm - 80A TO-220
File Size	313.86K / 13 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDFS6N754
OCR Text	...fet and schottky diode 30v, 4a, 56m ? features
Description	30V Integrated N-Channel PowerTrenchMOSFET and Schottky Diode
File Size	362.54K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	HUF76413DKF085
OCR Text	56m ? ge nera l description th ese n- channel power mosfets are manufactured us- ing the innovative ultrafet ? pr ocess . this advanced pro- cess technology achieves the lowest possible on- resistance per silicon area, resulting in outsta...
Description	N-Channel Logic Level UltraFETPower MOSFET 60V, 4.8A, 56m
File Size	562.02K / 11 Page	View it Online	Download Datasheet

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