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22360 03601M MS1508CM AGR19045 MA4P4301 N60HS B1065 32422
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  50-ohm Datasheet PDF File

For 50-ohm Found Datasheets File :: 27180    Search Time::1.875ms    
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    GOTREND
Part No. GBD160808PGA601N GBD201209PGH101N GBD160808PGB301N GBD100505PGB400N GBD160808PGZA102N GBD201209PGB300N GBD451616PGH800N GBD321611PGH501N GBD321611PGB151N GBD160808PGA151N GBD201209PGA101N GBD321611PGA500N GBD201209PGH900N GBD201209PGH220N GBD201209PGA170N GBD201209PGB222N GBD160808PGA121N GBD201209PGA201N GBD100505PGA400N GBD321611PGB401N GBD160808PGA400N GBD201209PGB110N GBD160808PGZA471N GBD100505PGB100N GBD160808PGH601N GBD160808PGH100N GBD160808PGH400N GBD160808PGA301N GBD201209PGA070N GBD201209PGA501N GBD160808PGH391N GBD321611PGH101N GBD160808PGH750N GBD160808PGA471N GBD201209PGA202N GBD201209PGA151N GBD100505PGA060N GBD321611PGH310N GBD321611PGH102N GBD201209PGB201N GBD100505PGH600N GBD160808PGA110N GBD100505PGB121N GBD201209PGA301N GBD322513PGH900N GBD451616PGA600N GBD201209PGA331N GBD201209PGA090N GBD321611PGA300N GBD160808PGA102N GBD100505PGA300N GBD201209PGB151N GBD160808PGH221N GBD201209PGH501N GBD321611PGH800N GBD201209PGH070N GBD160808PGB241N GBD321611PGH320N GBD201209PGH181N GBD321611PGB201N GBD201209PGH170N GBD160808PGA101N GBD160808PGB060N GBD201209PGH221N GBD160808PGZH121N GBD201209PGH201N GBD160808PGB131N GBD321611PGA272N GBD201209PGA272N GBD201209PGA152N GBD1608
OCR Text ...0 1.25 0.20 0.90 0.20 0.50 0.3 201212 2.0 0.20 1.25 0.20 1.25 0.20 0.50 0.3 160808 1.6 0.15 0.80 0.15 ...ohm) = 600 ohm gh : high-current 6. n : tolerance m=20%, n=25% part no example: 3. p : ...
Description Multilayer Ferrite Chip Bead

File Size 176.77K  /  12 Page

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    SamHop Microelectronics...
Part No. STP06N20 STF06N20
OCR Text ...6 2.2 1.8 1.4 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =2.5a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d = 10ma 0.6 1.2 1.8 2.4 3.0 stp06n20 stf06n20...
Description Super high dense cell design for low RDS(ON).
N-Channel Enhancement Mode Field Effect Transistor

File Size 205.36K  /  11 Page

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    LBT45803

SIPAT Co,Ltd
Part No. LBT45803
OCR Text ...ching required for operation at 50 ? rohs compliant (2002/95/ec), pb-free specifications parameter parameter parameter parameter unit unit ...ohm ohm ohm ohm notes - component values may change depending on board layout. package dimension pad...
Description 458MHz SAW Filter 5MHz Bandwidth

File Size 353.19K  /  4 Page

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    LBT45305

SIPAT Co,Ltd
Part No. LBT45305
OCR Text ...ching required for operation at 50 ? rohs compliant (2002/95/ec), pb-free specifications parameter parameter parameter parameter unit unit ...ohm ohm ohm ohm notes - component values may change depending on board layout. package dimension pad...
Description 453MHz SAW Filter

File Size 341.40K  /  3 Page

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    BG3230 BG3230R

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BG3230 BG3230R
OCR Text ... Values typ. 13 1 max. 15 15 50 50 100 - Unit V Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source b...Ohm 4n7 RGEN 50 Ohm RG1 50 Ohm VGG 6 Feb-27-2004 ...
Description RF-MOSFET - Package: SOT363
DUAL N-Channel MOSFET Tetrode 双N沟道MOSFET的四极管

File Size 148.03K  /  6 Page

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    SamHop Microelectronics...
Part No. STS8217
OCR Text ...120 100 80 60 40 150 125 100 75 50 25 175 t a - ambient temperature - c dt - percentage of rated power - % derating factor of forward bias safe operating area 0 0 0.5 3 2.5 2 1.5 1 150 125 100 75 50 25 175 t a - ambient temperature - c pt...
Description Super high dense cell design for low RDS(ON).
Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 102.73K  /  7 Page

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    SamHop Microelectronics
Part No. STS8216
OCR Text ...8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v g s =4v i d = 6a v g s =2.5v i d =5.2 a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v g s i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 1.20 125 150 100 75 50 25 0 -25 -50 i d...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 181.58K  /  7 Page

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    SamHop Microelectronics
Part No. STS8215
OCR Text ...120 100 80 60 40 150 125 100 75 50 25 175 t a - ambient temperature - c dt - percentage of rated power - % derating factor of forward bias safe operating area 0 0 0.5 3 2.5 2 1.5 1 150 125 100 75 50 25 175 t a - ambient temperature - c pt...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 103.65K  /  7 Page

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    SamHop Microelectronics...
Part No. STS8213
OCR Text ...120 100 80 60 40 150 125 100 75 50 25 175 t a - ambient temperature - c dt - percentage of rated power - % derating factor of forward bias safe operating area 0 0 0.5 3.0 2.5 2.0 1.5 1.0 150 125 100 75 50 25 175 t a - ambient temperature...
Description Super high dense cell design for low RDS(ON).
Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 108.35K  /  7 Page

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    SamHop
Part No. STS8212
OCR Text 50 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m @ vgs=...ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =5v,i d =4a in...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 102.86K  /  7 Page

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For 50-ohm Found Datasheets File :: 27180    Search Time::1.875ms    
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