3.0a pdf Datasheet P14 Full Text Search --- IC-ON-LINE


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For 3.0a Found Datasheets File :: 9817 Search Time::0.953ms
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				Advanced Power Electronics Corp.
Part No.	AP30N30WI
OCR Text	... lower on-resistance i d 30a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i dm a p d @t c =25 w w/ e as single pulse avalanche energy 3 mj i ar avalanche current a t stg t j ...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	110.19K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	30ETH06 30ETH06-1 30ETH06S
OCR Text	... V V V A A pF nH IR = 100A IF = 30A, TJ = 25C IF = 30A, TJ = 150C VR = VR Rated TJ = 150C, VR = VR Rated VR = 600V Measured lead to lead 5mm from package body 1.34 1.75 0.3 60 33 8.0 50 500 - IR Reverse Leakage Current - CT L...
Description	Hyperfast Rectifier 600V 30A HyperFast Discrete Diode in a TO-220AC package 600V 30A HyperFast Discrete Diode in a TO-262 package 600V 30A HyperFast Discrete Diode in a D2-Pak (UltraFast) package
File Size	205.98K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	AUIR3317 AUIR3317S AUIR3317STRL AUIR3317STRR
OCR Text	...0 15 m ? vcc-vin=-14v, iout=30a static electrical characteristics tj=-40..150c, vcc=6..26v (unless otherwise specified) symbol parameter min. typ. max. units test conditions vcc op. operating voltage range 6 ? 26 v i...
Description	LOW EMI CURRENT SENSE HIGH SIDE SWITCH
File Size	268.92K / 16 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	CPU165MK
OCR Text	... 0V, IC = 1.0mA -- 2.1 2.7 IC = 30A V GE = 15V -- 2.6 -- V IC = 52A -- 2.3 -- IC = 30A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -14 -- mV/C VCE = VGE, IC = 250A 9.8 17 -- S VCE = 100V, I C = 30A -- -- 250 A VGE = 0V, V CE = 600V -- --...
Description	IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
File Size	76.58K / 2 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP4439GH-HF
OCR Text	...-resistance 2 v gs =-10v, i d =-30a - - 10 m ? v gs =-4.5v, i d =-20a - - 17 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-30a - 55 - s i dss drain-source leakage curr...
Description	Low On-resistance, Simple Drive Requirement
File Size	90.45K / 4 Page	View it Online	Download Datasheet

				Vincotech
Part No.	V23990-P546-X3X-D3-19
OCR Text	30a v geon 15 v v geoff 0 v r gon 8 r goff 4 figure 1 i gbt figure 2 fwd typical average static loss as a function of output current typical average static loss as a function of output current p loss = f(i out ) p loss = f(i out ) ...
Description	Output Inverter Application
File Size	49.25K / 3 Page	View it Online	Download Datasheet

				FAIRCHILD SEMICONDUCTOR CORP
Part No.	AF60UA60DN
OCR Text	.... typ. max. units v fm 1 i f = 30a i f = 30a t c = 25 o c t c = 125 o c - - - - 2.2 2.0 v i rm 1 v r = 600v v r = 600v t c = 25 o c t c = 125 o c - - - - 100 150 a t rr i rr q rr i f = 30a, di/dt = 200a/ s t c = 25 o c - - ...
Description	30 A, 600 V, SILICON, RECTIFIER DIODE
File Size	304.78K / 5 Page	View it Online	Download Datasheet

				Cystech Electonics Corp.
Part No.	MTN60NF06LJ3
OCR Text	... 60a r ds(on) @v gs =10v, i d =30a 10m (typ) r ds(on) @v gs =4.5v, i d =20a 12m (typ) features ? simple drive requirement ? repetitive avalanche rated ? fast switching characteristic ? rohs compliant package & halogen-fre...
Description	N-Channel Enhancement Mode Power MOSFET
File Size	255.88K / 9 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXTN60N50L2
OCR Text	... ma r ds(on) v gs = 10v, i d = 30a note 1 100 m linear l2 tm power mosfet n-channel enhancement mode extended fbsoa ixtn60n50l2 v dss = 500v i d25 = 53a r ds(on) 100m ds100086(12/08) features ?...
Description	N-Channel Enhancement Mode
File Size	125.03K / 5 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics
Part No.	STD60NF06 STD60NF06T4 CD00003115 D60NF06
OCR Text	... resistance v gs = 10v, i d = 30a 0.014 0.016 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. forward transconductance v ds = 15v, i d = 30a 20 s c ...
Description	STD60NF06 N-channel 60V - 0.014ohm - 60A - DPAK STripFET II Power MOSFET
File Size	387.85K / 13 Page	View it Online	Download Datasheet

For 3.0a Found Datasheets File :: 9817 Search Time::0.953ms
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