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200.5a Datasheet PDF File

For 200.5a Found Datasheets File :: 41353 Search Time::1.5ms
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				HITACHI[Hitachi Semiconductor]
Part No.	2SJ483
OCR Text	...-0.03 -0.01 0 50 100 150 Ta (C) 200 Ambient Temperature -0.01 -0.03 -0.1 -0.3 -3 -10 -30 -100 Drain to Source Voltage V DS (V) Typical Output Characteristics -10 V -6 V -10 -5 V -4 V -3.5 V -3 V (A) -10 Typical Transfer Charact...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	42.73K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ496
OCR Text	...t) -0.03 0 50 100 150 Ta (C) 200 Ta = 25 C -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) Ambient Temperature Typical Output Characteristics -10 -10 V -5 V -4 V -10 -3.5 V (A) -8 Ta = 25C Pulse Test -3 V -4 ...
Description	Silicon P-Channel MOS FET High Speed Power Switching
File Size	49.68K / 10 Page	View it Online	Download Datasheet

				Renesas
Part No.	2SJ529S
OCR Text	...0 50 100 150 Tc (C) 200 Case Temperature -0.2 Ta = 25 C -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) Typical Output Characteristics -10 -10 V -5 V -4 V Pulse Test -6 -10 -3.5 V Typical Transfer ...
Description	Transistors>Switching/MOSFETs
File Size	95.18K / 15 Page	View it Online	Download Datasheet

				Shindengen
Part No.	2SK2669
OCR Text	...100 m s tc = 25 c single pulse 200 m s 1ms 10ms dc drain-source voltage v ds [v] drain current i d [a] r ds(on) limit transient the...5a e as = 100mj e ar = 10mj inductance l [mh] single avalanche current i as [a] 0 20 40 60 ...
Description	Power MOSFETs / HVX-II Series (Three Terminal Type)
File Size	331.99K / 12 Page	View it Online	Download Datasheet

				Renesas Electronics, Corp. HITACHI[Hitachi Semiconductor]
Part No.	2SJ506 2SJ506L 2SJ506S
OCR Text	... 10 PW 40 Pch (W) -500 -200 I D (A) 30 -100 -50 -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 10 s Channel Dissipation Drain Current 20 DC =1 Op 10 Operation in this area is limited by R DS(on) -0.5 -1 -2 0m ...
Description	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开 Power switching MOSFET
File Size	49.71K / 10 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	RFP15N08L
OCR Text	...J, JUNCTION TEMPERATURE (oC) 200 FIGURE 5. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT FIGURE 6. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 6-236 RFP15N08L Typical Performance Curves 1.4 VGS = VDS NO...
Description	15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET
File Size	40.42K / 5 Page	View it Online	Download Datasheet

				Linear Technology
Part No.	LT3759 LT3957A
OCR Text	...ency (%) 75 80 85 90 95 100 100 200 300 400 500 3957a ta01b 600 v in = 12v lt3957a 2 3957af pin configuration absolute maximum ratin...5a/div 3957a g21 v in = 12v see typical application: 5v to 16v input, 12v output sepic converter ...
Description	Boost, Flyback, SEPIC and Inverting Converter
File Size	492.89K / 28 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ529 2SJ529L 2SJ529S
OCR Text	...0 50 100 150 Tc (C) 200 Case Temperature -0.2 Ta = 25 C -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) Typical Output Characteristics -10 -10 V -5 V -4 V Pulse Test -6 Drain Current -3 V -4 -10 -3.5 ...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	51.89K / 9 Page	View it Online	Download Datasheet

				Wuxi NCE Power Semicond...
Part No.	NCE80R1K2I
OCR Text	...in. max. min. max. a 2.200 2.400 0.087 0.094 a1 1.050 1.350 0.042 0.054 b 1.350 1.650 0.053 0.065 b 0.500 0.700 0.020 0.028 b1 0.700 0.900 0.028 0.035 c 0.430 0.580 0.017 0.023 c1 0.430 0.580 0.017 0.023 d 6.350 6.650...
Description	N-Channel Super Junction Power MOSFET
File Size	593.08K / 8 Page	View it Online	Download Datasheet

				TY Semiconductor Co., Ltd
Part No.	AOTF10T60P
OCR Text	...5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =5a v gs =10v 0 4 8 12 16 20 0 5 10 15 20 25 30 v ds (volts) figure 1: on-region characteristics i ...
Description	Trench Power AlphaMOS-II technology
File Size	966.74K / 7 Page	View it Online	Download Datasheet

For 200.5a Found Datasheets File :: 41353 Search Time::1.5ms
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