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				SANKEN[Sanken electric]
Part No.	2SJ425
OCR Text	...I D = -250A VDS = -10V, ID = -4.0a VGS = -10V, ID = -4.0a VDS = -25V, f = 1.0MHz, VGS = 0V I D = -4.0a, VDD = -30V, VGS = -10V, See Figure 3 on Page 5. VGS -- ID Characteristics 250 VDS = -10V 200 150 100 ID -- RDS (ON) Characteristi...
Description	MOSFET
File Size	33.23K / 1 Page	View it Online	Download Datasheet

				American First Semiconductor
Part No.	EF104PG EF105PG EF103PG
OCR Text	...4 maximum forward voltage@i =1.0a 5 reverse recovery time f , note 1 v f (v) 4 ef105pg 600 420 1.75 -55 to +150 t rr (ns) *5 50 100 200 600 0.875 ef104pg 400 280 400 storage temperature t stg o c +175 -65 (c) o operating temperature t...
Description	(EF101PG - EF105PG) 1.0a Glass Passivated Sufrace Mount Efficient Fast Rectifiers
File Size	398.36K / 2 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	BUV26F
OCR Text	...age buv26af i c = 10a; i b = 1.0a 1.0 v buv26f i c = 6a; i b = 0.6a b 0.6 v ce(sat)-2 collector-emitter saturation voltage buv26af i c = 5a; i b = 0.5a b 0.5 v buv26f i c = 12a; i b = 1.2a 2.0 v be(sat)-1 base-emitt...
Description	Silicon NPN Power Transistors
File Size	77.83K / 2 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BC847DS
OCR Text	...cut-off current v cb =30v; i e =0a --15na v cb =30v; i e =0a; t j = 150 c --5 m a i ebo emitter-base cut-off current v eb =6v; i c = 0 a - - 100 na h fe dc current gain v ce =5v i c =10 m a - 280 - i c = 2 ma 200 300 450 v cesat collector-...
Description	45 V, 100 mA NPN/NPN general-purpose transistor
File Size	95.21K / 12 Page	View it Online	Download Datasheet

				Silan Microelectronics
Part No.	SVD8N80T
OCR Text	...l time t f v dd =400v,i d =8.0a, r g =25 (note 2,3) -- 43.8 145 ns total gate charge q g -- 32.2 45 gate-source charge q gs -- 7.66 -- gate-drain charge q gd v ds =640v,i d =8.0a, v gs =1...
Description	800V N-CHANNEL MOSFET
File Size	560.64K / 8 Page	View it Online	Download Datasheet

				Rohm
Part No.	RSX101MM-30
OCR Text	...d voltage - 40 to + 150 i f =1.0a unit duty Q0.5 30 direct reverse voltage 30 a glass epoxi mounted, a 60hz half sin wave, one cycle, - 150 45 parameter symbol conditions limits average forward rectified current i o 60hz half sin wave, r...
Description	Schottky Barrier Diode
File Size	508.15K / 6 Page	View it Online	Download Datasheet

				SANKEN[Sanken electric]
Part No.	2SK1178
OCR Text	...V, I D = 250A VDS = 10V, ID = 2.0a VGS = 10V, ID = 2.0a VDS = 25V, f = 1.0MHz, VGS = 0V ID = 2.0a, VDD = 250V, VGS = 10V, See Figure 2 on Page 5. 35 (Tc = 25C) 260 150 -55 to +150 unclamped, VDD L= I *: See = 50V, 1 on28mH, 5.L = 4.0...
Description	MOSFET
File Size	33.49K / 1 Page	View it Online	Download Datasheet

				MPS Industries, Inc.
Part No.	PP18D1210
OCR Text	... i out 0601 18 C 36 vdc 1.2v@25.0a --1.8v@16.7a 1201 36 C 75 vdc 1.2v@25.0a --1.8v@16.7a 0602 18 C 36 vdc 2.5v@12.0a -- 3.3v@9.00a 1202 36 C 75 vdc 2.5v@12.0a -- 3.3v@9.00a 0603 18 C 36 vdc 5.0 v @ 6 a 1203 36 C 75 vdc 5.0 v @ 6 a 0606 18...
Description	PLANAR TRANSFORMERS HIGH FREQUENCY 30 WATT
File Size	369.07K / 2 Page	View it Online	Download Datasheet

				Sanken electric
Part No.	NR301E
OCR Text	...ow saturation voltage type io=1.0a linear regulator ic built in the exposed soic8 package. the out put voltage vo is adjustable by the external resistor. in this ic, start - up and shut - down are possible by the external signa...
Description	eSOIC8 Linear Regulator IC
File Size	454.90K / 12 Page	View it Online	Download Datasheet

				RECTRON LTD
Part No.	FFM306-W FFM301-W
OCR Text	...ditions: i f = 0.5a, i r = -1.0a, i rr = -0.25a dimensions in inches and (millimeters) 2002-11 ratings maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified current at t ...
Description	3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB
File Size	27.23K / 3 Page	View it Online	Download Datasheet

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