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    RJF0605DPD RJF0605DPD-00-J3

Renesas Electronics Corporation
Part No. RJF0605DPD RJF0605DPD-00-J3
OCR Text channel mos fet series power switching description this fet has the over temperature shut-down capability sensin g to the junction temperature. this fet has the built-in over temperature shut-down circuit in the gate area. and this ci...
Description Silicon N Channel MOS FET Series Power Switching
   Silicon N Channel MOS FET Series Power Switching

File Size 84.34K  /  8 Page

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    RJF0604JPD-00-J3 RJF0604JPD12

Renesas Electronics Corporation
Part No. RJF0604JPD-00-J3 RJF0604JPD12
OCR Text channel mos fet series power switching description this fet has the over temperature shut-down capability sensin g to the junction temperature. this fet has the built-in over temperature shut-down circuit in the gate area. and this ci...
Description Silicon N Channel MOS FET Series Power Switching
   Silicon N Channel MOS FET Series Power Switching

File Size 83.92K  /  8 Page

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    IR2110E6

IRF[International Rectifier]
Part No. IR2110E6
OCR Text ...DE DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Sepa...
Description HIGH AND LOW SIDE DRIVER

File Size 306.76K  /  14 Page

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    IR2110L6

IRF[International Rectifier]
Part No. IR2110L6
OCR Text ...DE DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Sepa...
Description HIGH AND LOW SIDE DRIVER

File Size 337.18K  /  14 Page

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    IR2110L

IRF[International Rectifier]
Part No. IR2110L
OCR Text channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Separate logic supply range from 5 t...
Description HIGH AND LOW SIDE DRIVER

File Size 131.31K  /  14 Page

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    IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF

International Rectifier
Part No. IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF
OCR Text channel designed for bootstrap operation * * * * * * * * Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V logic compa...
Description HIGH AND LOW SIDE DRIVER

File Size 218.79K  /  16 Page

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    TK20X60U

Toshiba Semiconductor
Part No. TK20X60U
OCR Text ...e energy (note 3) e ar 15 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and t he significant...
Description Switching Regulator Applications

File Size 186.74K  /  6 Page

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    TOSHIBA
Part No. TK20X60U
OCR Text ...e energy (note 3) e ar 15 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and t he significant...
Description Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 187.64K  /  6 Page

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    椋???″????浣?涓??)??????
Part No. MRF6S19100HSR3
OCR Text channel enhancement - mode lateral mosfets designed for n- cdma base station applications with frequencies from 1930 to 1990 mhz. suitable for tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab fo r p c n - p c ...
Description RF Power Field Effect Transistors

File Size 388.18K  /  12 Page

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