| |
|
 |
HITACHI[Hitachi Semiconductor]
|
| Part No. |
PF0031
|
| OCR Text |
... = 2 mw, VDD = 12.5 V, Pout = 6 w (at APC controlled), RL = Rg = 50 , Output VSwR = 20:1 All phases, t = 20sec Test Condition VDD = 17 V, VA...flange warp size of the heatsink flange: S Conditions M3 Screw Bolts Spec 4 to 6 kg*cm S=0 +0.3/- 0 ... |
| Description |
MOS FET Power Amplifier Module for Mobile Phone
|
| File Size |
52.29K /
13 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
MOTOROLA[Motorola, Inc]
|
| Part No. |
MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3
|
| OCR Text |
...40 Nominal. 1.80 - 1.88 GHz, 60 w, 26 V LATERAL N-CHANNEL RF POwER MOSFETs
CASE 465-06, STYLE 1 NI-780 MRF18060A
CASE 465A-06, STYLE 1...flange)
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H C... |
| Description |
MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 w, 26 V Lateral N-Channel RF Power MOSFETs
RF POwER FIELD EFFECT TRANSISTORS
|
| File Size |
399.98K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| Part No. |
MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
|
| OCR Text |
...18060BLSR3
1.90 - 1.99 GHz, 60 w, 26 V LATERAL N - CHANNEL RF POwER MOSFETs
Freescale Semiconductor, Inc...
CASE 465 - 06, STYLE 1 NI...flange)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb ... |
| Description |
HALL EFFFECT LATCH, SMD, SOT23w-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23w; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes
RF Power Field Effect Transistors
|
| File Size |
486.59K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
HITACHI[Hitachi Semiconductor]
|
| Part No. |
PF0310A
|
| OCR Text |
... Unit MHz A % dBc dBc dBc -- -- w w -- Pin = 20 mw, VDD = 9.6 V, VPC = 4 V, RL = Rg = 50 Pin = 20 mw, VDD = 6 V, VPC = 3.7 V, RL = Rg = 50 ...flange warp size of the heatsink flange: S Conditions M2.6 Screw Bolts Spec 1.5 to 3.5 kg*cm S=0 +0.... |
| Description |
MOS FET Power Amplifier Module for VHF Band
|
| File Size |
35.62K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
HITACHI[Hitachi Semiconductor]
|
| Part No. |
PF0311
|
| OCR Text |
... -- Unit MHz A % dBc dBc dBc -- w w -- Pin = 20 mw, VDD = 9.6 V, VPC = 6 V, RL = Rg = 50 Pin = 20 mw, VDD = 6 V, VPC = 5.5 V, RL = Rg = 50 ...flange warp size of the heatsink flange: S Measuring Conditions M2.6 Screw Bolts Spec 1.5 to 3.5 kg*... |
| Description |
MOS FET Power Amplifier Module for VHF Band
|
| File Size |
40.83K /
11 Page |
View
it Online |
Download Datasheet |
| |
|
|
HITACHI[Hitachi Semiconductor]
|
| Part No. |
PF0314 PF0313
|
| OCR Text |
...5.9 mm Low operation voltage: 7 w at 7.2 V High efficiency: 55% Typ Low power control current: 0.5 mA Max
Ordering Information
Type. Nam...flange)
PF0313 Series
Internal Diagram and External Circuit
G GND Pin1 Pin Pin2 VPC Pin3 VDD ... |
| Description |
(PF0313 / PF0314) MOS FET Power Amplifier Module for VHF Band
From old datasheet system
|
| File Size |
55.62K /
16 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
