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    SKM75GB176D

Semikron International
Part No. SKM75GB176D
OCR Text Trench IGBT Modules SKM 75GB176D Inverse Diode Module Preliminary Data Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications GB 1 14-11-2006 RAA (c) by SEMIKRON SKM 75GB176...
Description Trench IGBT Modules

File Size 751.92K  /  6 Page

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    FDB3502

Fairchild Semiconductor
Part No. FDB3502
OCR Text Trench(R) MOSFET May 2008 FDB3502 N-Channel Power Trench MOSFET 75V, 14A, 47m Features Max rDS(on) = 47m at VGS = 10V, ID = 6A 100% UIL Tested RoHS Compliant (R) tm General Description This N-Channel MOSFET is produced u...
Description N-Channel Power Trench? MOSFET 75V, 14A, 47mΩ
N-Channel Power Trench㈢ MOSFET 75V, 14A, 47mヘ

File Size 274.41K  /  6 Page

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    PMN25UN

NXP Semiconductors
Part No. PMN25UN
OCR Text ...ce (smd) plasti c package using trench mosfet technology. 1.2 features and benefits ? low threshold voltage ? very fast switching ? trench mosfet technology 1.3 applications ? relay driver ? high-speed line driver ? low-side loadswitch ? sw...
Description 20 V, 6 A N-channel Trench MOSFET

File Size 807.63K  /  16 Page

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    FDG1024NZ

Fairchild Semiconductor
Part No. FDG1024NZ
OCR Text Trench(R) MOSFET August 2009 FDG1024NZ Dual N-Channel PowerTrench(R) MOSFET 20 V, 1.2 A, 175 m Features Max rDS(on) = 175 m at VGS = 4.5 V, ID = 1.2 A Max rDS(on) = 215 m at VGS = 2.5 V, ID = 1.0 A Max rDS(on) = 270 m at VGS = 1.8...
Description Dual N-Channel PowerTrench? MOSFET 20 V, 1.2 A, 175 mΩ
Dual N-Channel PowerTrench垄莽 MOSFET 20 V, 1.2 A, 175 m楼?

File Size 281.92K  /  7 Page

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    FZ1200R45HL3

Infineon Technologies AG
Part No. FZ1200R45HL3
OCR Text ...9 revision:3.1 ihm-bmodulmittrench/feldstoppigbt3undemittercontrolled3diode ihm-bmodulewithtrench/fieldstopigbt3andemittercontrolled3diode v ces = 4500v i c nom = 1200a / i crm = 2400a typischeanwendungen typicalappl...
Description ESD / Transient Protection Diode for Near Field Communication (NFC)

File Size 581.82K  /  9 Page

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    ADG438 ADG438F ADG438FBN ADG438FBR ADG439F ADG439FBN ADG439FBR ADG439FBRW

Analog Devices, Inc.
AD[Analog Devices]
Part No. ADG438 ADG438F ADG438FBN ADG438FBR ADG439F ADG439FBN ADG439FBR ADG439FBRW
OCR Text ... against momentary shorting. 6. Trench Isolation Eliminates Latch-up. A dielectric trench separates the p- and n-channel MOSFETs thereby preventing latch-up. 7. Improved OFF Isolation. Trench isolation enhances the channel-to-channel isolat...
Description High Performance 4/8 Channel Fault-Protected Analog Multiplexers
?5 V, Fault Protected, 8-Channel High Performance Analog Multiplexer
5 V, Fault Protected, 4-Channel High Performance Analog Multiplexer

File Size 127.40K  /  8 Page

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    SEMIX353GB176HDS09

Semikron International
Part No. SEMIX353GB176HDS09
OCR Text ... Values Unit SEMiX(R) 3s Trench IGBT Modules SEMiX353GB176HDs Tj = 150 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 ...
Description Trench IGBT Modules

File Size 157.30K  /  6 Page

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    SEMIX703GD126HDC09

Semikron International
Part No. SEMIX703GD126HDC09
OCR Text ...Values Unit SEMiX(R) 33c Trench IGBT Modules SEMiX703GD126HDc Tj = 150 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * U...
Description Trench IGBT Modules

File Size 157.66K  /  5 Page

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    APTGV100H60BTPG

Microsemi Corporation
Part No. APTGV100H60BTPG
OCR Text Trench + Field Stop IGBT Power module Trench & Field Stop IGBT Q1, Q3: VCES = 600V ; IC = 100A @ Tc = 80C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 100A @ Tc = 80C CoolMOSTM Q5: VCES = 600V ; IC = 95A @ Tc = 25C CR3 K VBUS1 VBUS2 ...
Description Boost chopper CoolMos垄芒 full bridge NPT & Trench Field Stop IGBT Power module

File Size 461.88K  /  15 Page

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    APTGV100H60T3G

Microsemi Corporation
Part No. APTGV100H60T3G
OCR Text Trench + Field Stop(R) IGBT Power module Trench & Field Stop(R) IGBT Q1, Q3: VCES = 600V ; IC = 100A @ Tc = 80C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 90A @ Tc = 80C 13 14 Application CR3 Q3 11 10 Q1 18 19 CR1 * Solar con...
Description Full - Bridge NPT & Trench Field Stop垄莽 IGBT Power module

File Size 370.21K  /  9 Page

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