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For ruggedized Found Datasheets File :: 4303 Search Time::2.532ms
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				Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
Part No.	MTP156K00691D MTP156M00691D MTP
OCR Text	ruggedized construction * Low dissipation factor * Low DC leakage * 100% 25C DCL screening * 100% voltage age @ 85C - 8 hours * 100% cap & DF screening PERFORMANCE CHARACTERISTICS Operating Temperature: - 55C to + 85C Voltage Range: 6 t...
Description	Wet Tantalum Capacitors Subminiature, Axial Leads
File Size	83.16K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IR2151
OCR Text	...immune CMOS technologies enable ruggedized monolithic construction. The front end features a programmable oscillator which is similar to the 555 timer. The output drivers feature a high pulse current buffer stage and an internal deadtime de...
Description	SELF-OSCILLATING HALF-BRIDGE DRIVER
File Size	193.98K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7103 IRF7103TR IRF7103N
OCR Text	...th the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a ...
Description	Power MOSFET(Vdss=50V/ Rds(on)=0.130ohm/ Id=3.0A) Power MOSFET(Vdss=50V, Rds(on)=0.130ohm, Id=3.0A) 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package 50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package
File Size	165.28K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7104 IRF7104TR
OCR Text	...th the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a ...
Description	-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
File Size	155.01K / 9 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFP460AS
OCR Text	... combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-...
Description	Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A) 功率MOSFET（减振钢板基本\u003d 500V及的Rdson）最大值\u003d 0.27ohm，身份证\u003d 20A条） Power MOSFET(Vdss=500V Rds(on)max=0.27ohm Id=20A) 500V Single N-Channel HEXFET Power MOSFET in a SMD-247 package
File Size	114.44K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFP460P IRFP460PPBF
OCR Text	... combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-...
Description	500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)
File Size	173.69K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IR2131
OCR Text	...rietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with 5V CMOS or LSTTL outputs. A current trip function which terminates all six outputs can be derived from an external current sense resistor. ...
Description	3 HIGH SIDE AND 3 LOW SIDE DRIVER
File Size	248.96K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRFP260 IRFP260N IRFP260NPBF
OCR Text	...th the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is pr...
Description	200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rdson）\u003d 0.04ohm，身份证\u003d 50A条）
File Size	120.41K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15
OCR Text	...th the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for app...
Description	-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package 34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A) Avalanche Energy Ratings
File Size	111.77K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7350 IRF7350N IRF7350P IRF7350TR
OCR Text	...th the fast switching speed and ruggedized device design that HEXFET(R) power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in DC motor drives and load management applications. The...
Description	-100V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package 100V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss= -100V)
File Size	235.93K / 16 Page	View it Online	Download Datasheet

For ruggedized Found Datasheets File :: 4303 Search Time::2.532ms
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