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Renesas Electronics Corporation.
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| Part No. |
H7N0312LS
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| OCR Text |
...diode reverse recovery time t rr ? 75 ? ns i f = 85 a, v gs = 0 dif/ dt = 50a/ s notes: 1. pulse test
h7n0312ld, h7n0312ls, h7n0312lm rev.1, aug. 2002, page 4 of 11 main characteristics drain to source voltage v ds... |
| Description |
Silicon N Channel MOS FET High Speed Power Switching
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| File Size |
123.48K /
13 Page |
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it Online |
Download Datasheet
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Renesas
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| Part No. |
HSM2836C
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| OCR Text |
...1 mhz reverse recovery time t rr ? ? 20.0 ns i f = 10 ma, v r = 6 v, r l = 50 ? note : per one device.
hsm2836c rev.3, mar. 2002, page 3 of 3 main characteristic 0 0.2 0.4 0.6 0.8 1.0 0 20406080100 1.0 10 10 1.0 ... |
| Description |
Diodes>Switching
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| File Size |
77.70K /
7 Page |
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it Online |
Download Datasheet |
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Renesas
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| Part No. |
HSM223C
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| OCR Text |
...1 mhz reverse recovery time t rr ? ? 3.0 ns i f = 10 ma, v r = 6 v, r l = 50 ?
hsm223c rev.4, mar. 2002, page 3 of 3 main characteristic f=1mhz ta= 75 c ta= -25 c ta= 25 c ta= 75 c ta= 25 c ta= 50 c ta= 0 c ta= ... |
| Description |
Diodes>Switching
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| File Size |
76.53K /
7 Page |
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it Online |
Download Datasheet |
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Renesas
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| Part No. |
FS10AS-06
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| OCR Text |
...to case reverse recovery time t rr ?55?nsi s = 10 a, dis/dt = ?100 a/ s
fs10as-06 rev.1.00, aug.20.20 04, page 3 of 6 performance curv...repeater use. 6. the prior written approval of renesas technology corp. is necessary to reprint or ... |
| Description |
Transistors>Switching/MOSFETs
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| File Size |
97.54K /
7 Page |
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it Online |
Download Datasheet |
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