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				NEC[NEC] NEC Corp.
Part No.	2SC5009 2SC5009-T1 2SC5009-T1-T2
OCR Text	...OLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic r...
Description	NPN epitaxial-type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
File Size	57.57K / 10 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	2SC5010 2SC5010-T1 2SC5010-T1-T2
OCR Text	...OLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic r...
Description	NPN epitaxial-type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD 128 x 128 pixel format, LED or EL Backlight available
File Size	59.95K / 10 Page	View it Online	Download Datasheet

				Nexperia
Part No.	74AUP1G132GW
OCR Text	...rom 0.8 v to 3.6 v. this device is fully specified for partial power-down applications using i off . the i off circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. the inputs s...
Description	Low-power 2-input NAND Schmitt trigger
File Size	301.71K / 20 Page	View it Online	Download Datasheet

				Skyworks Solutions
Part No.	CDF7623-203 CDB7619 CDB7619-203
OCR Text	...edance control. p-type silicon is used to obtain superior 1/f noise characteristics. n-type silicon is also available. packaged diodes are suitable for use in waveguide, coaxial, and stripline applications. the choice of n- and p-type...
Description	N-Type Detector Schottky Diode X Band P-Type Detector Schottky Diode K Band
File Size	158.60K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC5022
OCR Text	...application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bear...
Description	Silicon NPN Triple Diffused
File Size	33.36K / 7 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor] Toshiba Semiconductor
Part No.	2SC5049
OCR Text	...gain Noise figure Note: Marking is "YA-". I EBO hFE Cob fT PG NF Min -- -- -- 50 -- 7.0 12.0 -- Typ -- -- -- 120 0.45 10.0 15.0 1.2 Max 10 1 10 250 0.8 -- -- 2.5 pF GHz dB dB Unit A mA A Test conditions VCB = 15 V, IE = 0 VCE = 8 V, RBE = ...
Description	Silicon NPN Epitaxial npn型硅外延
File Size	23.39K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC5050
OCR Text	...gain Noise figure Note: Marking is "YZ-". I EBO hFE Cob fT \|S21\| PG NF Min 15 -- -- -- 50 -- 8.0 -- 11.0 -- Typ -- -- -- -- 120 0.6 11.0 13.5 14.0 1.1 Max -- 10 1 10 250 1.1 -- -- -- 2.0 pF GHz dB dB dB Unit V A mA A Test conditions I C = 1...
Description	Silicon NPN Epitaxial
File Size	23.65K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC5051
OCR Text	...gain Noise figure Note: Marking is "YZ-". I EBO hFE Cob fT \|S21\| PG NF Min 15 -- -- -- 50 -- 8.0 -- 11.5 -- Typ -- -- -- -- 120 0.65 11.0 14.0 14.5 1.1 Max -- 10 1 10 250 1.15 -- -- -- 2.0 pF GHz dB dB dB Unit V A mA A Test conditions I C =...
Description	Silicon NPN Epitaxial
File Size	23.89K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHMB57Z60
OCR Text	... www.irf.com 1 * current is limited by package for footnotes refer to the last page pre-irradiation low-ohmic features: low r ds(on) fast switching single event effect (see) hardened low total gate charge simple ...
Description	30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
File Size	169.98K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC5078
OCR Text	...gain Noise figure Note: Marking is "ZC-". I EBO hFE Cob fT PG NF Min -- -- -- 50 -- 9 14 -- Typ -- -- -- 120 0.3 12 17 1.6 Max 10 1 10 160 0.8 -- 20 2.5 pF GHz dB dB Unit A mA A Test conditions VCB = 15 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5...
Description	Silicon NPN Epitaxial
File Size	44.24K / 7 Page	View it Online	Download Datasheet

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