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Perkin Elmer Optoelectronics
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Part No. |
C30617 C30637 C30616
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OCR Text |
ingaas PIN Photodiodes
High-Speed ingaas PIN C30616, C30637, C30617, C30618 ingaas PIN Photodiodes
Description
These high-speed ingaas photodiodes are designed for use in O E M f i b e r- o p t i c c o m m u n i c a t i o n s systems... |
Description |
(C306xx) High Speed ingaas PIN
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File Size |
642.20K /
7 Page |
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it Online |
Download Datasheet |
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Filtronic Compound Semi... FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
LP7612P70
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OCR Text |
...Indium Gallium Arsenide (AlGaAs/ingaas) pseudomorphic High Electron Mobility Transistor (pHEMT), utilizing an Electron-Beam direct-write 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" Ti/Pt/Au gate structure minimizes parasi... |
Description |
PACKAGED HIGH DYNAMIC RANGE PHEMT
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File Size |
60.15K /
3 Page |
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it Online |
Download Datasheet |
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Filtronic Compound Semi... FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
LP7612
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OCR Text |
...Indium Gallium Arsenide (AlGaAs/ingaas) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-s... |
Description |
HIGH DYNAMIC RANGE PHEMT
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File Size |
38.11K /
2 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGF4319 MGF4319G 431XG MGF4316 MGF4316G MGF431XG MGF431XGSERIES
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OCR Text |
ingaas HEMT
DESCRIPTION
The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a... |
Description |
Super Low Noise ingaas HEMT From old datasheet system
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File Size |
32.55K /
3 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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