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gain Datasheet PDF File

For gain Found Datasheets File :: 104598 Search Time::2.187ms
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				Rohm CO.,LTD.
Part No.	2SC5060 2SC5060TV2M
OCR Text	... connection for high DC current gain. 5) Built-in resistor between base and emitter. 6) Built-in damper diode. !External dimensions (Units : mm) 6.8 2.5 0.65Max. 1.0 0.5 2.54 2.54 0.9 (1) (2) (3) 1.05 14.5 4.4 0...
Description	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) Power transistor (9010V, 3A) Power transistor (9010V/ 3A) SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
File Size	50.71K / 1 Page	View it Online	Download Datasheet

				SANKEN[Sanken electric]
Part No.	2SC5071
OCR Text	...(V C E= 4V) 40 125C DC Cur rent gain h F E 5 j - a( C/W) hFE - IC Characteristics (Typical) t ont s tg t f ( s) t on* t stg * t f - I C Characteristics (Typical) j-a - t Characteristics 3 25C -30C 1 0.5 tf Transie...
Description	Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
File Size	23.88K / 1 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC5078
OCR Text	gain bandwidth product fT = 12 GHz Typ * High gain, low noise figure PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter 2SC5078 Absolute Maximum Ratings (Ta = 25...
Description	Silicon NPN Epitaxial
File Size	44.24K / 7 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC5079
OCR Text	gain bandwidth product fT = 12 GHz Typ * High gain, low noise figure PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Outline CMPAK-4 2 3 4 1 1. Collector 2. Emitter 3. Base 4. Emitter 2SC5079 Absolute Maximum Ratings (Ta = 25C) I...
Description	Silicon NPN Transistor Silicon NPN Epitaxial
File Size	24.20K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC5080
OCR Text	gain bandwidth product fT = 13.5 GHz Typ * High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter 2SC5080 Absolute Maximum Ratings (Ta = ...
Description	Silicon NPN Transistor Silicon NPN Epitaxial
File Size	47.56K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC5081
OCR Text	gain bandwidth product fT = 13.5 GHz Typ * High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK-4 2 3 4 1 1. Collector 2. Emitter 3. Base 4. Emitter 2SC5081 Absolute Maximum Ratings (Ta = 25C) ...
Description	Silicon NPN Epitaxial
File Size	24.33K / 5 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SD1022
OCR Text	... 7V I Max 5mA EBO EB DC Current gain h V = 3V, I = Min 1,500 CE C 3A FE Max 30,000 Collector to Emitter Saturation3A V (sat) I = Voltage Max 1.5 V CE C Base to Emitter Saturation Voltage V (sat) I = 3mA Max 2.0 V BE B Thermal Resistance AEj...
Description	Darlington Transistor(5A NPN)
File Size	273.90K / 8 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SD1023
OCR Text	...ax 5mA EB EBO V = 7V DC Current gain h V = 3V, I = 3A Min 1,500 FE CE C Max 30,000 Collector to Emitter Saturation 3A V (sat) I = Voltage Max 1.5 V CE C Base to Emitter Saturation Voltage V (sat) I = 5mA Max 2.0 V BE B Thermal Resistance AE...
Description	Darlington Transistor(5A NPN)
File Size	290.46K / 9 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SD1024
OCR Text	...x 5 mA EB EBO V = 7V DC Current gain h V = 3V, I = 5A Min 1,500 FE CE C Max 30,000 Collector to Emitter Saturation 5A V (sat) I = Voltage Max 1.5V CE C Base to Emitter Saturation Voltage V (sat) I = 6mA Max 2.0V BE B Thermal Resistance AEjc...
Description	Darlington Transistor(8A NPN)
File Size	275.54K / 8 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SD1025
OCR Text	...x 5 mA EB EBO V = 7V DC Current gain h V = 3V, I = 5A Min 1,500 FE CE C Max 30,000 Collector to Emitter Saturation 5A V (sat) I = Voltage Max 1.5V CE C Base to Emitter Saturation Voltage V (sat) I = 10mA Max 2.0V BE B Thermal Resistance AEj...
Description	Darlington Transistor(8A NPN)
File Size	343.47K / 8 Page	View it Online	Download Datasheet

For gain Found Datasheets File :: 104598 Search Time::2.187ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |