| |
|
 |
SGS Thomson Microelectronics
|
| Part No. |
AN1226
|
| OCR Text |
...dg drain-source depletion width cgs creating an effective n-type material due to the depletion of the holes in the p-type channel. a high concentration of electrons is left with energy near the conduction band due to the barrier lowering ca... |
| Description |
UNDERSTANDING LDMOS DEVICE FUNDAMENTALS
|
| File Size |
38.53K /
4 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
INTERSIL[Intersil Corporation]
|
| Part No. |
RFP6N50 RFM6N45 RFP6N45
|
| OCR Text |
...F)
VGS = 0V, f = 1MHz CISS = cgs + CGD CRSS = CGD COSS CDS + cgs CISS
375
VDD = BVDSS
GATE SOURCE VOLTAGE RL = 83 IG(REF) = 1.1mA VGS = 10V 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS
8 VDD = BVDSS 6
1000
250
600
4 125
C... |
| Description |
6A/ 450V and 500V/ 1.250 Ohm/ N-Channel Power MOSFETs
6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs
|
| File Size |
32.43K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
|
| Part No. |
RFM12N40 RFM12N35
|
| OCR Text |
...
4000 VGS = 0V, f = 1MHz CISS = cgs + CGD CRSS = CGD COSS CDS + cgs
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
400 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 VGS, GATE TO SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
3... |
| Description |
12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs
12A/ 350V and 400V/ 0.500 Ohm/ N-Channel Power MOSFETs
|
| File Size |
30.97K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
|
| Part No. |
RFK70N06
|
| OCR Text |
...
5000 VGS = 0V, f = 1MHz CISS = cgs + CGD CRSS = CGD COSS CDS + cgs
1
2000 COSS 1000 CRSS
0.5
0 -80
0 -40 160 0 40 80 120 TJ , JUNCTION TEMPERATURE (oC) 200 0 5 10 15 20 VDS , DRAIN TO SOURCE VOLTAGE (V) 25
FIGURE 12. NOR... |
| Description |
70A, 60V, 0.014 Ohm, N-Channel Power MOSFET
|
| File Size |
85.73K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
|
| Part No. |
RFF60P06
|
| OCR Text |
...
VGS = 0V, f = 0.1MHz CISS = cgs + CGD CRSS = CGD COSS CDS + cgs
-30
4000 COSS 2000 CRSS 0 0 -5 -10 -15 -20 VDS , DRAIN TO SOURCE VOLTAGE (V) -25
RL = 1.0 IG(REF) = 4.2mA VGS = -10V 0.75 BVDSS 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 0... |
| Description |
25A? 60V, 0.030 Ohm, P-Channel Power MOSFET
25A⒂, 60V, 0.030 Ohm, P-Channel Power MOSFET
25A/ 60V/ 0.030 Ohm/ P-Channel Power MOSFET
|
| File Size |
88.23K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
|
| Part No. |
RF340
|
| OCR Text |
...
2500 VGS = 0V, f = 1MHz CISS = cgs + CGD CRSS = CGD COSS CDS + cgs CISS
1.05
1500
0.95
1000
0.85
500
CRSS
COSS
0.75 -60 -40
-20 0 20 40 60 80 100 120 140 160 TJ , JUNCTION TEMPERATURE (oC)
0
1
10 100... |
| Description |
10A/ 400V/ 0.550 Ohm/ N-Channel Power MOSFET
10A, 400V, 0.550 Ohm, N-Channel Power MOSFET
|
| File Size |
55.07K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
ERICSSON[Ericsson]
|
| Part No. |
PTF10161
|
| OCR Text |
...eries show current (A)
Cds & cgs (pF) .
cgs
400 300 200 100 0 0 10 20 30 40
75
Crss (pF)
65
Bias Voltage (V)
1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 5 30 55 80 105 1.72 5 8.32 11.6 14.84 18.12
Cds
VGS = 0 V f = 1 ... |
| Description |
165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor
|
| File Size |
286.01K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| Part No. |
PTF10065
|
| OCR Text |
...Series show current (A) Cds and cgs (pF)
0.200 0.692 1.183 1.675 2.167 2.658 120 100 80 7
Gate-Source Voltage vs. Case Temperature
1.03 1.02
Gate-Source Voltage
1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 0 20 40 60 80 100
VGS = 0 ... |
| Description |
30 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.93.99 GHz GOLDMOS Field Effect Transistor
|
| File Size |
92.96K /
6 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
