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ST Microelectronics
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Part No. |
STIL08-T5 STIL04
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OCR Text |
...thout driver current v rout = 800v i pt1 = i pt2 = open t j = 25c 55 a t j = 150c 300 300 i rout (on)** max reverse current with dri...3 - in order to reduce the dynamic current stress (di out /dt) through the structure of the stil, it... |
Description |
AC INRUSH CURRENT LIMITER
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File Size |
99.03K /
10 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FQA8N80
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OCR Text |
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's p...3 33.6 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/C C C
Gate-So... |
Description |
800V N-Channel MOSFET
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File Size |
692.48K /
8 Page |
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Part No. |
BUL38D
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OCR Text |
...cut-off current (v be =0) v ce =800v v ce =800v t j =125 o c 100 500 m a m a i ceo collector cut-off current (i b =0) v ce =450v 250 m a v c...3 100 m s ns v f diode forward voltage i c =2a 2.5 v * pulsed: pulse duration = 300 m s, duty cycle... |
Description |
High Voltage Fast-Switching NPN Power Transistor(楂??蹇??寮??NPN????朵?绠?
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File Size |
66.15K /
6 Page |
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SANYO
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Part No. |
2SC5443
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OCR Text |
...IB=0 IEBO VEB=4V, IC=0 ICBO VCB=800V, IE=0 hFE1 hFE2 VCE=5V, IC=1.0A VCE=5V, IC=16A Conditions Ratings min 800 1.0 10 20 4 30 7 typ max 1.0 ...3.0 0.2 Unit V V s s
Switching Time Test Circuit
PW=20s D.C.1% I NPUT VR
I B1 IB 2 RB
+ +
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Description |
Horizontal Deflection Switching Transistors
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File Size |
46.96K /
5 Page |
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意法半导
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Part No. |
STP4NB80
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OCR Text |
800v - 3 w - 4a - to-220/to-220fp powermesh ? mosfet preliminary data n typical r ds(on) = 3 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description ... |
Description |
N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET)
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File Size |
83.09K /
6 Page |
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Price and Availability
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