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  800v-3-4a- Datasheet PDF File

For 800v-3-4a- Found Datasheets File :: 913    Search Time::1.828ms    
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    ST Microelectronics
Part No. STIL08-T5 STIL04
OCR Text ...thout driver current v rout = 800v i pt1 = i pt2 = open t j = 25c 55 a t j = 150c 300 300 i rout (on)** max reverse current with dri...3 - in order to reduce the dynamic current stress (di out /dt) through the structure of the stil, it...
Description AC INRUSH CURRENT LIMITER

File Size 99.03K  /  10 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQA8N80
OCR Text 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's p...3 33.6 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-So...
Description 800V N-Channel MOSFET

File Size 692.48K  /  8 Page

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    APT7F80K

Microsemi Corporation
Part No. APT7F80K
OCR Text 800V, 7A, 1.50 MAX,TRR 160nS N-Channel FREDFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FR...3 Min 800 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Vo...
Description N-Channel FREDFET

File Size 132.12K  /  4 Page

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    FQB2N80 FQI2N80 FQB2N80TM FQI2N80TU

FAIRCHILD[Fairchild Semiconductor]
Part No. FQB2N80 FQI2N80 FQB2N80TM FQI2N80TU
OCR Text 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's p...3 @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalan...
Description 800V N-Channel QFET
800V N-Channel MOSFET

File Size 657.80K  /  9 Page

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Part No. BUL38D
OCR Text ...cut-off current (v be =0) v ce =800v v ce =800v t j =125 o c 100 500 m a m a i ceo collector cut-off current (i b =0) v ce =450v 250 m a v c...3 100 m s ns v f diode forward voltage i c =2a 2.5 v * pulsed: pulse duration = 300 m s, duty cycle...
Description High Voltage Fast-Switching NPN Power Transistor(楂??蹇??寮??NPN????朵?绠?

File Size 66.15K  /  6 Page

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    SANYO
Part No. 2SC5443
OCR Text ...IB=0 IEBO VEB=4V, IC=0 ICBO VCB=800V, IE=0 hFE1 hFE2 VCE=5V, IC=1.0A VCE=5V, IC=16A Conditions Ratings min 800 1.0 10 20 4 30 7 typ max 1.0 ...3.0 0.2 Unit V V s s Switching Time Test Circuit PW=20s D.C.1% I NPUT VR I B1 IB 2 RB + + ...
Description Horizontal Deflection Switching Transistors

File Size 46.96K  /  5 Page

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    C5682

Sanyo Semicon Device
Part No. C5682
OCR Text ...ctor cutoff current i cbo v cb =800v, i e =0 10 m a collector cutoff current i ces v ce =1500v, r be =0 1.0 ma collector sustain voltage v c...3 : emitter sanyo : to-3pmlh 21.0 5.0 22.0 0.8 20.4 4.0 16.0 3.4 2.0 2.8 2.1 5.45 5.45 0.7 0.9 3.5 8...
Description Search --To 2SC5682

File Size 57.30K  /  4 Page

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    C5681

Sanyo Semicon Device
Part No. C5681
OCR Text ...ctor cutoff current i cbo v cb =800v, i e =0 10 m a collector cutoff current i ces v ce =1500v, r be =0 1.0 ma collector sustain voltage v c...3 : emitter sanyo : to-3pmlh 21.0 5.0 22.0 0.8 20.4 4.0 16.0 3.4 2.0 2.8 2.1 5.45 5.45 0.7 0.9 3.5 8...
Description Search --To 2SC5681

File Size 48.16K  /  4 Page

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    FJAF6808D FJAF6808DYDTU FJAF6808DTU

Fairchild Semiconductor Corporation
Part No. FJAF6808D FJAF6808DYDTU FJAF6808DTU
OCR Text ...Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=300mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.2A IC=5A, IB=1.2A IF = 4.5A V...3 0.2 V V V s s Min. Typ. Max. 1 10 200 Units mA A mA V * Pulse Test: PW=20s, duty Cycle=1% Pulse...
Description GT 3C 3#12 SKT RECP BOX
NPN Triple Diffused Planar Silicon Transistor

File Size 76.80K  /  5 Page

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    意法半导
Part No. STP4NB80
OCR Text 800v - 3 w - 4a - to-220/to-220fp powermesh ? mosfet preliminary data n typical r ds(on) = 3 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description ...
Description N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET)

File Size 83.09K  /  6 Page

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