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  400v 7a Datasheet PDF File

For 400v 7a Found Datasheets File :: 730    Search Time::1.719ms    
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    BU921T

Inchange Semiconductor Company Limited
Part No. BU921T
OCR Text ...ollector cutoff current v ce = 400v; i b = 0 0.25 ma i ebo emitter cutoff current v eb = 5v; i c = 0 50 ma v ecf c-e diode forward voltage i f = 7a 2.5 v isc website www.iscsemi.cn
Description isc Silicon NPN Darlington Power Transistor

File Size 80.77K  /  2 Page

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    ST Microelectronics
Part No. STH7NA80
OCR Text ... r turn-on time rise time v dd =400v i d = 3.5 a r g =47 w v gs =10v (see test circuit, figure 3) 3.5 9.5 45 125 ns ns (di/dt) on turn-on current slope v dd =640v i d =7a r g =47 w v gs =10v (see test circuit, figure 5) 170 a/ m s q g q g...
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

File Size 323.02K  /  10 Page

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    FK7VS-12

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FK7VS-12
OCR Text ...C ID = 7a 16 VDS = 100V 200V 12 400v 8 VGS = 0V Pulse Test 32 24 TC = 125C 16 75C 8 25C 4 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE...
Description HIGH-SPEED SWITCHING USE

File Size 50.04K  /  5 Page

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    FK7VS-12

Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
Part No. FK7VS-12
OCR Text ...C ID = 7a 16 VDS = 100V 200V 12 400v 8 VGS = 0V Pulse Test 32 24 TC = 125C 16 75C 8 25C 4 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE...
Description Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 55.85K  /  5 Page

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    SANYO
Part No. 2SC5951
OCR Text ...Symbol ICBO IEBO Conditions VCB=400v, IE=0 VEB=5V, IC=0 Ratings min typ max 10 10 Unit A A Continued on next page. Any and all SANYO p...7a VCE=5V, IC=1mA VCE=10V, IC=0.1A VCB=10V, f=1MHz IC=0.7a, IB=0.14A IC=0.7a, IB=0.14A IC=1mA, IE=0 ...
Description General-Purpose Transistors

File Size 36.15K  /  5 Page

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    SANYO
Part No. 2SC5957
OCR Text ...Symbol ICBO IEBO Conditions VCB=400v, IE=0 VEB=5V, IC=0 Ratings min typ max 10 10 Unit A A Continued on next page. Any and all SANYO p...7a, IB1=1.4A, IB2=--2.8A, RL=28.6, VCC=200V IC=7a, IB1=1.4A, IB2=--2.8A, RL=28.6, VCC=200V IC=7a, IB...
Description High-Voltage High-Speed Switching Transistors

File Size 35.79K  /  5 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS14KM-10
OCR Text ...25C ID = 14A VDS = 100V 200V 12 400v 32 8 16 4 8 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE...
Description HIGH-SPEED SWITCHING USE

File Size 44.01K  /  4 Page

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    FS14KM-12A

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS14KM-12A
OCR Text ... VDS = 100V 200V 32 12 400v 24 125C 8 16 4 TCh = 25C ID = 14A 8 0 0 40 80 120 160 200 0 ...7a 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VDS = 10V ID = 1mA ...
Description Power MOSFETs: FL Series
HIGH-SPEED SWITCHING USE
From old datasheet system

File Size 67.86K  /  4 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS14KM-9
OCR Text ... ID = 14A 16 VDS = 100V 200V 12 400v 32 8 16 4 8 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE...
Description HIGH-SPEED SWITCHING USE

File Size 43.85K  /  4 Page

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    SMK0780FD

KODENSHI KOREA CORP.
Part No. SMK0780FD
OCR Text ...me (note 3,4) t d(on) v dd =400v, i d =7a, r g =25 ? - 40 - ns rise time (note 3,4) t r - 110 - turn-off delay time (note 3,4) t d(off) - 65 - fall time (note 3,4) t f - 70 - total gate charge (note 3,4) q g v ds =6...
Description SWITCHING REGULATOR APPLICATION

File Size 295.37K  /  8 Page

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For 400v 7a Found Datasheets File :: 730    Search Time::1.719ms    
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