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  36.5dbm Datasheet PDF File

For 36.5dbm Found Datasheets File :: 914    Search Time::2.172ms    
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    FLM3742-4F

Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
Part No. FLM3742-4F
OCR Text 36.5dbm (Typ.) High Gain: G1dB = 12.0dB (Typ.) High PAE: add = 38% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed Package DESCRIPTION The FLM3742-4F is a power GaAs FET ...
Description C-Band Internally Matched FET

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    EUDYNA[Eudyna Devices Inc]
Part No. FLM7785-6F
OCR Text ...Bm) Output Power (dBm) 38 36 34 32 VDS=10V f = 8.1 GHz Pout 39 38 37 36 35 7.7 7.9 8.1 8.3 25dBm 29dBm 27dBm 30 add 15 0 30 28 8.5 20 22 24 26 28 30 32 Frequency (GHz) Input Power (dBm)...
Description C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGFC45V5964A C455964A1
OCR Text ...WER Po (dBm S.C.L.) 42 40 38 36 34 32 30 28 26 24 22 20 VDS=10(V) IDS=8(A) f=6.4(GHz) Delta f=10(MHz) 0 Po -10 -20 -30 -40 IM3 -50 -60 18 20 22 24 26 28 30 32 34 36 INPUT POWER Pin(dBm S.C.L.) S PARAMETERS f (GHz) 5....
Description 5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET

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    TIM5964-35SLA-251

Toshiba Corporation
Toshiba Semiconductor
Part No. TIM5964-35SLA-251
OCR Text ...dBm) VDS= 10 V IDS 8 A Pin= 36.5 dBm 46 45 44 43 5.75 6.00 6.25 6.50 Frequency (GHz) 6.75 Output Power vs. Input Power 48 47 46 45 Po(dBm) 44 43 42 41 40 39 29 31 33 Pin(dBm) 35 37 39 add Po f=6.75 GHz VDS= 10 V IDS 8 A ...
Description MICROWAVE POWER GaAs FET TIM5964-35SLA-251
From old datasheet system

File Size 36.69K  /  4 Page

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    TIM5964-4UL TIM4450-4UL

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. TIM5964-4UL TIM4450-4UL
OCR Text 36.5dbm at 5.9GHz to 6.4GHz HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Ga...
Description MICROWAVE POWER GaAs FET
From old datasheet system

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    2SC4416

HITACHI[Hitachi Semiconductor]
Part No. 2SC4416
OCR Text ...9 0.415 ANG. -20.1 -30.7 -34.8 -36.4 -37.2 -38.4 -39.9 -41.3 -43.4 -45.0 Test Condition VCE = 5 V, IC = 10 mA, ZO = 50 Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 S11 MAG. 0.627 0.492 0.432 0.411 0.395 0.394 0.392 0.390 0.388 ...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 55.33K  /  10 Page

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    Anadigics
Part No. AMT121302
OCR Text ...1 4.75 2.54 T.P. 1.27 T.P. 0.36 12.70 6.35 0.46 13.20 0.53 13.70 1.27 NOTES: 1. INTERNAL OPTICAL HEIGHT = 0.0650.005[1.650.1] 2. BENT LEADS SHOULD NOT EXTNED OUTSIDE DIAMETER (OD) OF CAP OR TOUCH EACH OTHER. 3. ALL DIMENSIONS ARE REFE...
Description Datacom Optical Receivers
From old datasheet system

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    Sony
Part No. CXG1047FN
OCR Text ...Values R1 R2 R3 R4 R5 12 12 160 36 8.2 C1 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C16 C17 C18 C19 C20 C21 47pF 47pF 8.2pF 47pF 1nF 47pF 1.5pF 3.3pF 5.6pF 47pF 2.7/2.7/1.6pF 8.2/1.2pF 47pF 22pF 1nF 47pF 1nF 1nF 2.7pF 8pF L1 L2 L3 L4 L5 ...
Description Dual-Band 3V Power Amplifier for GSM900/1800 Applications
From old datasheet system

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    Maxim
Part No. MAX2247
OCR Text ... -28 ADJ CPR (dBc) -30 -32 -34 -36 -38 -40 POUT = +23dBm -46 TA = +25C TA = +25C TA = +85C TA = -40C -62 TA = -40C 2.7 3.0 3.3 3.6 3.9 4.2 -64 -66 2.7 3.0 TA = -40C 2.7 3.0 3.3 3.6 3.9 4.2 3.3 ...
Description 2.4GHz SiGe Linear Power Amplifier
From old datasheet system

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    MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Part No. MAX9995 MAX9995ETX-T MAX9995ETX MAX9995ETX-TD MAX9995ETX-D
OCR Text ...ices are available in a compact 36-pin thin QFN package (6mm x 6mm) with an exposed paddle. Electrical performance is guaranteed over the ex...5dBm PRF = -10dBm PRF = -5dBm 70 60 9.5 23 9.7 9.8 9.9 22 12.6 25.6 66 dBc 61 88 dBc 78 -29 -17 -25 ...
Description Dual / SiGe / High-Linearity / 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch
From old datasheet system
Dual SiGe High-Linearity 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch
Hex 2-Input NOR Drivers 20-CDIP -55 to 125
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch 双通道,锗,高线性度700MHz2200MHz下变频混频器,LO缓冲开

File Size 360.06K  /  13 Page

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For 36.5dbm Found Datasheets File :: 914    Search Time::2.172ms    
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