Part Number Hot Search : 
KB411D UPA18 R0100 T1206 C1181H GS809C BDX85A C1055
Product Description
Full Text Search
  320v Datasheet PDF File

For 320v Found Datasheets File :: 704    Search Time::0.969ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

    2N722710

Microsemi Corporation
Part No. 2N722710
OCR Text ...in current v gs = 0v, v ds = 320v v gs = 0v, v ds = 320v, t j = +125c i dss1 i dss2 25 0.25 adc madc static drain-source on -state resistance v gs = 10v, i d = 9.0a pulsed v gs = 10v, i d = 14.0a pulsed t j ...
Description N-CHANNEL MOSFET

File Size 161.66K  /  4 Page

View it Online

Download Datasheet





    JANTXV2N6800 JANTX2N6800 IRFF330

International Rectifier
Part No. JANTXV2N6800 JANTX2N6800 IRFF330
OCR Text ...50A VDS > 15V, IDS = 2.0A VDS= 320v, VGS=0V VDS = 320v VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =10V, ID =3.0A VDS= 200V VDD = 200V, ID = 3.0A, RG = 7.5 Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage ...
Description HEXFET? TRANSISTORS

File Size 128.91K  /  7 Page

View it Online

Download Datasheet

    KEC semiconductor
Part No. KHB7D5N60F1
OCR Text ...ic total gate charge q g v ds =320v, i d =10.5a v gs =10v (note4,5) - 32.5 37.5 nc gate-source charge q gs - 6.4 - gate-drain charge q gd - 13 - turn-on delay time t d(on) v dd =200v r l =20 r g =25 (note4,5) - 23 4...
Description (KHB7D5N60F1 / KHB7D5N60P1) High Voltage MOSFETs

File Size 106.54K  /  7 Page

View it Online

Download Datasheet

    AM80A AM80A-024L-065F27 AM80A-048L-012F60 AM80A-048L-022F60 AM80A-048L-033F50 AM80A-048L-050F40 AM80A-048L-120F18 AM80A-

ASTEC[Astec America, Inc]
Part No. AM80A AM80A-024L-065F27 AM80A-048L-012F60 AM80A-048L-022F60 AM80A-048L-033F50 AM80A-048L-050F40 AM80A-048L-120F18 AM80A-048L-150F16 AM80A-048L-240F10 AM80A-150L-065F33 AM80A-300L-022F60 AM80A-300L-033F50 AM80A-300L-050F40 AM80A-300L-065F33 AM80A-300L-120F18 AM80A-300L-150F16 AM80A-300L-240F10 AM80A-300L-280F09 AM80A-320L-280F09
OCR Text ... Watts 24V, 48V, 150V, 300V, or 320v Single Electrical Specs Input Input Range Efficiency 18 - 36V or 36 - 72 VDC or 90 - 200 VDC or 180 - 400 VDC 84% typical (5V @ 40A) 87% typical (12V @ 18A) Output Load Regulation Line Regulatio...
Description 240 Watts

File Size 982.09K  /  2 Page

View it Online

Download Datasheet

    HIRF730 HIRF730F

Hi-Sincerity Mocroelect...
Hi-Sincerity Mocroelectronics
Part No. HIRF730 HIRF730F
OCR Text ...ain-Source Leakage Current (VDS=320v, VGS=0V, Tj=125C) Gate-Source Leakage Current-Forward (Vgsf=20V, VDS=0V) Gate-Source Leakage Current-Reverse (Vgsr=-20V, VDS=0V) Gate Threshold Voltage (VDS=VGS, ID=250uA) Static Drain-Source On-Resistan...
Description N-CHANNEL POWER MOSFET

File Size 45.45K  /  4 Page

View it Online

Download Datasheet

    HIRF740 HIRF740F IRF740F

HSMC CORP.
Hi-Sincerity Mocroelectronics
Part No. HIRF740 HIRF740F IRF740F
OCR Text ...ain-Source Leakage Current (VDS=320v, VGS=0V, Tj=125C) Gate-Source Leakage Current-Forward (Vgsf=20V, VDS=0V) Gate-Source Leakage Current-Reverse (Vgsr=-20V, VDS=0V) Gate Threshold Voltage (VDS=VGS, ID=250uA) Static Drain-Source On-Resistan...
Description N-Channel Power MOSFET (400V, 10A)

File Size 46.93K  /  4 Page

View it Online

Download Datasheet

    IR3103

International Rectifier
Part No. IR3103
OCR Text ... Note 5,6 TJ=150C, VP=450V, V+= 320v,VCC=+15V TJ=150C, VP=450V, tSC<10s V+= 320v, VGE=15V, VCC=+15V Note 5: Characterized on FREDFET die level, not measured at EOL Note 6: COSS eff. is a fixed capacitance that gives same charging time as...
Description HALF-BRIDGE FREDFET AND INTEGRATED DRIVER

File Size 194.93K  /  11 Page

View it Online

Download Datasheet

    IRFS730A

Fairchild Semiconductor
Part No. IRFS730A
OCR Text ...A VGS=30V VGS=-30V VDS=400V VDS=320v,TC=125 C See Fig 7 V nA VDS=5V,ID=250 A VGS=10V,ID=1.95A VDS=50V,ID=1.95A 4 O 4 O VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=200V,ID=5.5A, RG=12 See Fig 13 VDS=320v,VGS=10V, ID=5.5A See F...
Description Advanced Power MOSFET

File Size 262.42K  /  7 Page

View it Online

Download Datasheet

    BLV740

SHANGHAI BELLING CO., LTD.
Part No. BLV740
OCR Text ...eakage current tc=125 v ds =320v , v gs =0v - - 250 ua i gss gate-source leakage current v gs = 20v - - 100 na q g total gate charge - - 63 nc q gs gate-source charge - - 9 nc q ...
Description N-channel Enhancement Mode Power MOSFET

File Size 575.34K  /  6 Page

View it Online

Download Datasheet

For 320v Found Datasheets File :: 704    Search Time::0.969ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of 320v

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
4.4116961956024