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FUJI[Fuji Electric]
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| Part No. |
7MBP25TEA120
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| OCR Text |
...Forward voltage of Diode
VCE 15a VF ton toff trr -15a
Turn-on time Turn-off time Reverse recovery time
VDC600VTj=125 Ic25AFig.1Fig.6 VDC600V IF25A Fig.1Fig.6
5.2 Control circuit Item Supply current of P-side pre-driver (one unit... |
| Description |
IGBT - IPM
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| File Size |
1,073.29K /
23 Page |
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COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
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| Part No. |
7MBR25NE120
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| OCR Text |
...200V, VGE=0V VCE=0V, VGE=20V IC=15a, VGE=15V VCC=600V IC=15a VGE=15V RG=82 ohm VR=1200v IF=25A VR=1600V Min.
7MBR25NE120
Characteristics Typ. Max. 1.0 20 4.5 7.5 3.3 3.0 4000 1.2 0.6 1.5 0.5 0.35 1.0 0.1 3.3 0.8 0.6 1.5 0.5 1 0.6 1.4 1.... |
| Description |
IGBT module
IGBT (1200v/25A/PIM)
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| File Size |
491.17K /
9 Page |
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it Online |
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FUJI[Fuji Electric]
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| Part No. |
7MBR25SA-120
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| OCR Text |
...VCE=0V VGE= 20V VGE=15V Chip IC=15a Terminal VCC = 600V IC = 15a VGE = 15V RG = 82 VR=1200v T= 25C T=100C T=25 / 50C
Brake Chopper
2.10 2.20 0.35 0.25 0.45 0.08 5000 495 3375
s mA K
465 3305
I Thermal Characteristics
Items
... |
| Description |
Power Integrated Module (PIM)
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| File Size |
422.56K /
6 Page |
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it Online |
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FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
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| Part No. |
7MBR25UA120
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| OCR Text |
...
8
6
20
4 Ic=30A Ic=15a Ic= 7.5A
10
2
0 0 1 2 3 4 5
0 5 10 15 20 25
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ V ]
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V... |
| Description |
IGBT MODULE (U series) 1200v / 25A / PIM
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| File Size |
184.41K /
7 Page |
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Advanced Power Technolo...
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT11GF120KR
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| OCR Text |
...imum junction temperature. IC = 15a, RGE = 25W, L = 300H, Tj = 25C See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6213 Rev B 12-2000
3
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| Description |
FAST IGBT
MOSFET
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| File Size |
24.63K /
2 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT12080JVFR
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| OCR Text |
15a
S G D
0.800
S
POWER MOS V (R)
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.... |
| Description |
15 A, 1200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V
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| File Size |
112.69K /
4 Page |
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it Online |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
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| Part No. |
APT2X31D120J APT2X30D120J
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| OCR Text |
...ery Time, IF = 1.0A, diF /dt = -15a/s, VR = 30V, TJ = 25C Reverse Recovery Time IF = 30A, diF /dt = -240A/s, VR = 650V Forward Recovery Time IF = 30A, diF /dt = 240A/s, VR = 650V Reverse Recovery Current IF = 30A, diF /dt = -240A/s, VR = 65... |
| Description |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 1200v 30A
CONNECTOR ACCESSORY 双超快软恢复整流二极
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| File Size |
34.55K /
2 Page |
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it Online |
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