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Icemos Technology
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Part No. |
ICE22N60W
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OCR Text |
... r ds (on) v gs =10v, i d =11a, t j =25 o c - 0.14 0.16 ? v gs =10v, i d =11a, t j =150 o c - 0.4 - gate resistance r g f =1 mhz, open drain - 4 - ? dynamic characteristics ... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
554.49K /
8 Page |
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it Online |
Download Datasheet |
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SEMELAB LTD
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Part No. |
SEMELABLTD-IRF9140R1 IRF9140-JQR-B
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OCR Text |
...?18a r ds(on) 0.2 ? ? 20v ?18a ?11a ?72a 125w 1.0w/c 500mj ?18a 12.5mj ?5.5v/ns ?55 to +150c 300c document number 5350 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://w... |
Description |
18 A, 100 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3
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File Size |
16.75K /
2 Page |
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it Online |
Download Datasheet |
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AO4702
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OCR Text |
...features v ds (v) = 30v i d = 11a (v gs = 10v) r ds(on) < 16m ? (v gs = 10v) r ds(on) < 25m ? (v gs = 4.5v) schottky vds (v) = 30v, if = 3a, vf<0.5v@1a the ao4702 uses advanced trench technology to provide excellent r ds(on) and ... |
Description |
N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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File Size |
249.66K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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