...onic equipment
12.60.3 7.20.3 (1.0) (1.0)
Unit: mm
7.00.3 3.00.2 2.00.2 3.50.2
0 to 0.15
2.50.2
1.10.1
1.00.2
0.750.1 0.40.1...5 V, IC = 0 VCE = -2 V, IC = - 0.1 A VCE = -2 V, IC = -1 A IC = -3 A, IB = - 0.15 A IC = -3 A, IB = ...
...onic equipment
12.60.3 7.20.3 (1.0) (1.0)
Unit: mm
7.00.3 3.00.2 2.00.2 3.50.2
0 to 0.15
2.50.2
1.10.1
1.00.2
0.750.1 0.40.1...5 -10 15 1.3 150 -55 to +150 C C Unit V V V A A W
1
2
3
1: Base 2: Collector 3: Emitter I-...
...3.50.2
0 to 0.15
2.50.2
(1.0)
(1.0)
1.10.1
1.00.2
Absolute Maximum Ratings TC = 25C
Parameter Collector-base voltage (Emi...5 2.0 1.0 2 000 500 Symbol VCEO Conditions IC = -30 mA, IB = 0 Min -60 -80 Typ
E Max Unit V -100 ...
1
s Features
q q q
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Co...5 300 150 -55 ~ +150
Unit V V
1
2
3
1.27 1.27
V A A mW C C
1:Emitter 2:Collector ...
1 1.5 2.50.1 1.0
s Features
q q q
1.5 R0.9 R0.9
0.4
2.40.2 2.00.2 3.50.1
High collector to base voltage VCBO. High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat).
1.0
0.450.05 1
...
...C=-0.5A Min Typ Max -10 10 240 -1.0 18 Unit
A A
40
V MHZ
Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com
Description
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)