19-1463; Rev 0; 5/99
NUAL KIT MA UATION TA SHEET EVAL WS DA FOLLO
+3.6V, 1W Autoramping Power Amplifier for 900MHz Applications
Featu...4w Operating Temperature Range ...........................-40C to +85C Junction Temperature ...........
Description
3.6V / 1W Autoramping Power Amplifier for 900MHz Applications 3.6V, 1W Autoramping Power Amplifier for 900MHz Applications 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
...2 (PDIP, CERDIP) TOP VIEW
NC 1 NC 2 BAL 3
14 NC 13 BAL 12 COMP + 11 V+ 10 OUT 9 NC 8 NC
Ordering Information
PART NUMBER HA1-2542-...4w. The thermal resistance (JA) of the PDIP package is 100oC/W, which increases the junction tempera...
Description
70MHz, High Slew Rate, High Output Current Operational Amplifier From old datasheet system 70MHz/ High Slew Rate/ High Output Current Operational Amplifier 70MHz, High Slew Rate, High Output
Current Operational Amplifier(70MHz、高转换速率高输出电流运算放大器)
...om 12 phase exciter types to 4w 1-2 phase exciter types. The current decay pattern can also be selected (SLOW DECAY, FAST DECAY, MIX DECAY) to increase the decay of regenerative current at chopping OFF, thereby improving response characteri...
Description
PWM Current Control Type Stepping Motor Driver(PWM电流控制马达驱动 Monolithic Digital IC
...en collector FLAG output at pin 1. The UVLO circuit disables the outputs at low VDD; hysteresis of 0.5V is provided.
Features
* * * * * ...4w Derate above TA = +25C ............................24mW/C PLCC (V) .................................
...guration
(DIP and SOIC)
CLEAR 1 2
SUB
THERMAL SHUTDOWN
I LIMIT
20 FLAG 19 OUTPUT 1 18 OUTPUT 2
CLOCK SERIAL DATA IN
3 8-BIT SE...4w Derate above TA = +25C ............................ 14mW/C Wide SOIC (WM) ..........................
... large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full ...4w Digi-Key 220QBK-ND TMM4, .030" Dielectric Thickness, 2 oz. copper, er = 4.5, Rogers
Assembly D...
Description
12 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor