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  0.0043 Datasheet PDF File

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    Sanyo Electric Co.,Ltd.
Part No. 2SD1953 0771
OCR Text ...ns unit:mm 2009A [2SD1953] 8.0 4.0 2.7 Features * Darlington connection. * High DC current gain. * Low dependence of DC current gain on temperature. 1.6 0.8 0.8 0.6 1.5 3.0 7.0 3.0 11.0 15.5 0.5 1 2 3 S...
Description NPN Epitaxial Planar Silicon Transistor 120V/1.5A Driver Applications
From old datasheet system
NPN Epitaxial Planar Silicon Transistors for 120V/1.5A Driver Applications(120V/1.5A驱动器应用的NPN硅外延平面型晶体

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    hitachi
Part No. 2SD2121
OCR Text ... Max -- -- -- 20 320 -- 1.5 1.0 Unit V V V A Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = I E = 1 mA, IC = 0 VCB = 35 V, IE = 0 VCE = 2 V, IC = 0.5 A*2 VCE = 2 V, IC = 1.5 A*2 VCE = 2 V, IC = 1.5 A*2 I C = 2 A, IB = 0.2 A*...
Description Silicon NPN Triple Diffused
From old datasheet system

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    Sanyo
Part No. 2SD2199
OCR Text ...hFE2 fT VCE(sat) VCB=(-)40V, IE=0 VEB=(-)4V, IC=0 VCE=(-)2V, IC=(-)1A VCE=(-)2V, IC=(-)5A VCE=(-)5V, IC=(-)1A IC=(-)4A, IB=(-)0.4A 70* 30 10 (-)0.4 MHz V Conditions Ratings min typ max (-)0.1 (-)0.1 280* Unit mA mA * : The 2SB1450/2SD219...
Description PNP/NPN Epitaxial Planar Silicon Transistors

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    2SD2583

http://
NEC[NEC]
Part No. 2SD2583
OCR Text ...URES * Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) * High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A) PACKAGE DIMENSIONS in millimeters (inches) 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) 3.2 0.2 ( 0.126)...
Description AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS
From old datasheet system
TRANSISTOR,BJT,NPN,30V V(BR)CEO,5A I(C),TO-126
AUDIO FREQUENCY AMPLIFIER/ SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS

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    2SD2638

TOSHIBA[Toshiba Semiconductor]
Part No. 2SD2638
OCR Text ...t) = 5 V (max) High speed: tf = 0.8 s (max) Unit: mm Maximum Ratings (Tc = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction te...
Description TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type

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    2SD2645 0815

Sanyo Semicon Device
Part No. 2SD2645 0815
OCR Text ... unit : mm 2174A [2SD2645] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 21.0 4.0 2.8 2.0 20.4 0.7 0.9 ...
Description Color TV Horizontal Deflection Output Applications
NPN Triple Diffused Planar Silicon Transistor
From old datasheet system

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    hitachi
Part No. 2SD468
OCR Text ...k) PC Tj Tstg Ratings 25 20 5 1.0 1.5 0.9 150 -55 to +150 Unit V V V A A W C C 2SD468 Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 20 5 -- 1 Typ -- -- -- -- -- 0.2 0.79 190 2...
Description Silicon NPN Triple Diffused
From old datasheet system

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    Sanyo
Part No. 2SD894
OCR Text ...ons unit:mm 2009A [2SD894] 8.0 4.0 2.7 Features * High DC Current Gain (not less than 4000). * Wide ASO. * Low saturation voltage (1.5V max). * Large power rating (PC=10W). 1.6 0.8 0.8 0.6 1.5 3.0 7.0 3.0 11.0 15.5 ...
Description NPN Epitaxial Planar Silicon Transistor 25V/1.5A Driver Applications

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    hitachi
Part No. 2SJ117
OCR Text ...in V(BR)DSS I GSS -400 -- -- -2.0 -- Typ -- -- -- -- 5 Max -- 1 -1 -5.0 7 Unit V A mA V S pF pF pF ns ns ns ns V ns I F = -1 A, VGS = 0 I F = -1 A, VGS = 0, diF/dt = 100 A/s I D = -2 A, VGS = -15 V, RL = 15 Test conditions I D = -10 mA, V...
Description Silicon P-Channel MOS FET
From old datasheet system

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    hitachi
Part No. 2SK1056
OCR Text ...60 15 -- -- V IG = 100 A, VDS = 0 ID = 100 mA, VDS = 10 V ID = 7 A, VGD = 0 * ID = 3 A, VDS = 10 V * VGS = -5 V, VDS = 10 V, f = 1 MHz -------------------------------------------------------------------------------------- ---------------...
Description Silicon NPN Triple Diffused
From old datasheet system

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