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Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
K4M281633F K4M281633F-C K4M281633F-F1L K4M281633F-G K4M281633F-L K4M281633F-N K4M281633F-RE
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| OCR Text |
...all bi-directional buffers with tri-state outputs. 4. Dout is disabled, 0V VOUT VDDQ.
CAPACITANCE (VDD = 3.0V & 3.3V, TA = 23C, f = 1MHz, VREF =0.9V 50 mV)
Pin Clock RAS, CAS, WE, CS, CKE, DQM Address DQ0 ~ DQ15 Symbol CCLK CIN CADD ... |
| Description |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行54FBGA移动SDRAM
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| File Size |
111.99K /
12 Page |
 View
it Online |
Download Datasheet
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SAMSUNG[Samsung semiconductor]
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
K4M28163LF K4M28163LF-C K4M28163LF-L K4M28163LF-N K4M28163LF-R1L K4M28163LF-R75 K4M28163LF-RE K4M28163LF-S K4M28163LF-BR750
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| OCR Text |
...all bi-directional buffers with tri-state outputs. 5. Dout is disabled, 0V VOUT VDDQ.
CAPACITANCE (VDD = 2.5V,
Pin Clock RAS, CAS, WE, CS, CKE, DQM Address DQ0 ~ DQ15
TA = 23C, f = 1MHz, VREF =0.9V 50 mV) Symbol CCLK CIN CADD COUT... |
| Description |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行4FBGA移动SDRAM
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
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| File Size |
112.71K /
12 Page |
View
it Online |
Download Datasheet |
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Samsung Electronic
Samsung Semiconductor Co., Ltd.
Data Device, Corp.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
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| Part No. |
K4M28163PF K4M28163PF-F75 K4M28163PF-R K4M28163PF-RBGF75 K4M28163PF-RG K4M28163PF-RF750 K4M28163PF-BF900 K4M28163PF-BF750 K4M28163PF-BG750
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| OCR Text |
...all bi-directional buffers with tri-state outputs. 4. Dout is disabled, 0V VOUT VDDQ.
CAPACITANCE (VDD = 1.8V, TA = 23C, f = 1MHz, VREF =0.9V 50 mV)
Pin Clock RAS, CAS, WE, CS, CKE, DQM Address DQ0 ~ DQ15 Symbol CCLK CIN CADD COUT Mi... |
| Description |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行4FBGA移动SDRAM
8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54
8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, FBGA-54
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| File Size |
111.60K /
12 Page |
View
it Online |
Download Datasheet |
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RAMTRON
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| Part No. |
FM1808
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| OCR Text |
...E high causes the DQ pins to be tri-stated. Write Enable: Asserting /WE low causes the FM1808 to write the contents of the data bus to the address location latched by the falling edge of /CE. Supply Voltage: 5V Ground
Functional Truth Ta... |
| Description |
256KB BYTEWIDE FRAM MEMORY
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| File Size |
127.12K /
12 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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