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Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
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| Part No. |
MAX803TEXR
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| OCR Text |
...t Circuit S8 Standard .8 micron silicon gate CMOS 380 California, USA Malaysia January, 2000
III. Packaging Information A. Package Type: ...nitride/ Silicon dioxide) TiW/AlCu/TiWN None .8 microns (as drawn) .8 microns (as drawn) 5 mil. Sq. ... |
| Description |
PLASTIC ENCAPSULATED DEVICES 塑封器件
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| File Size |
58.25K /
8 Page |
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it Online |
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BOURNS INC
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| Part No. |
2CFA-330/470M-Q20TLF
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| OCR Text |
silicon 2cfa tapped rc filter specifications are subject to change without notice. customers should verify actual device performance in thei...nitride resistors and capacitors feature excellent stability, temperature coefficients and tracking... |
| Description |
RC NETWORK, TAPPED FILTER NETWORK, 1W, 33ohm, 50V, 0.000047uF, SURFACE MOUNT, QOSP-20
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| File Size |
247.43K /
3 Page |
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it Online |
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MAXIM[Maxim Integrated Products]
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| Part No. |
MAX837EUS
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| OCR Text |
...e Monitor S3 (Standard 3 micron silicon gate CMOS) 54 California or Oregon, USA Malaysia or Thailand November, 1996
III. Packaging Inform...nitride/ Silicon dioxide) Aluminum/Si (Si = 1%) None 3 microns (as drawn) 3 microns (as drawn) 5 mil... |
| Description |
PLASTIC ENCAPSULATED DEVICES
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| File Size |
88.00K /
8 Page |
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it Online |
Download Datasheet |
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AGILENT TECHNOLOGIES INC
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| Part No. |
MSA-0670
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| OCR Text |
silicon bipolar mmic amplifier data sheet features ? cascadable 50 ? gain block ? low operating voltage: 3.5 v typical v d ? 3 db bandwidt...nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance,... |
| Description |
0 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
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| File Size |
65.58K /
4 Page |
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AGILENT TECHNOLOGIES INC
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| Part No. |
MSA-2111-BLKG
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| OCR Text |
silicon bipolar mmic amplifier data sheet features ? cascadable 50 ? gain block ? medium power: 10 dbm at 900 mhz ? high gain: 16.5 db typi...nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance,... |
| Description |
100 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
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| File Size |
63.56K /
4 Page |
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it Online |
Download Datasheet |
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INTERNATIONAL RESISTIVE CO INC
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| Part No. |
WBC-DSOT23T-101-K-800-M WBC-DSOT23V-470-K-470-M
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| OCR Text |
...noise <-25db substrate material silicon substrate thickness 0.010? 0.001 (0.254mm 0.025) bond pad metallization aluminum: 10k? minimum backside 3000? gold passivation silicon dioxide or silicon nitride
irc advanced film division ? irc adv... |
| Description |
RC NETWORK, T-FILTER, 0.25W, 100ohm, 0.00008uF, SURFACE MOUNT, CHIP-3
RC NETWORK, TERMINATOR, 0.25W, 47ohm, 0.000047uF, SURFACE MOUNT, CHIP-3
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| File Size |
333.26K /
3 Page |
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it Online |
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MAXIM[Maxim Integrated Products]
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| Part No. |
MAX8521ETP
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| OCR Text |
...Modules B8 (Standard 0.8 micron silicon gate CMOS) 3007 California, USA Thailand October, 2002
III. Packaging Information A. Package Type...nitride/ Silicon dioxide) Aluminum/Si (Si = 1%) None 0.8 microns (as drawn) 0.8 microns (as drawn) 5... |
| Description |
MAXIM INTEGRATED PRODUCTS
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| File Size |
94.42K /
8 Page |
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it Online |
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MAXIM[Maxim Integrated Products]
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| Part No. |
MAX8863TEUK
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| OCR Text |
...lators S12 (Standard 1.2 micron silicon gate CMOS) 148 California, USA Philippines, Thailand or Malaysia October, 1997
III. Packaging Inf...nitride/ Silicon dioxide) Aluminum/Si (Si = 1%) None 1.2 microns (as drawn) 1.2 microns (as drawn) 5... |
| Description |
PLASTIC ENCAPSULATED DEVICES
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| File Size |
139.38K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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